The FJNS4201R is a PNP epitaxial silicon transistor from Fairchild Semiconductor Corporation. Its maximum collector-emitter voltage is -50 V, collector-base voltage is -50 V, collector current is -100 mA, collector power dissipation is 300 mW, junction temperature is 150 °C, and storage temperature is -55~150 °C.
The FJNS4201R is a PNP epitaxial silicon transistor with a built‑in bias resistor, intended for switching, inverter, interface, and driver circuits. The document lists its absolute maximum ratings, electrical characteristics, and typical performance curves.
Key specifications include collector‑base, collector‑emitter, and emitter‑base breakdown voltages, current gain, power dissipation, and package dimensions for the TO‑92S case. Additional sections cover trademarks, legal disclaimer, life‑support policy, and product status definitions.
| Collector‑Base Voltage (V_CBO) | -50 V |
|---|---|
| Collector‑Emitter Voltage (V_CEO) | -50 V |
| Emitter‑Base Voltage (V_EBO) | -10 V |
| Collector Current (I_C) | 100 mA |
| Power Dissipation (P_D) | 300 mW |
| Junction Temperature (T_J) | 150 °C |
| Storage Temperature | -55 °C to 150 °C |
| Input Resistor (R_in) | 4.7 kΩ |
| Resistor Ratio (R_in / R_e) | 0.9 – 1.4 |
The maximum collector current is 100 mA.