This document describes the absolute maximum ratings and electrical characteristics of the FJNS3208R NPN epitaxial silicon transistor. It is suitable for switching circuits, inverters, interface circuits, and driver circuits.
The FJNS3208R is an NPN epitaxial silicon transistor that includes a built‑in bias resistor (Ry=47 kΩ, Rg=22 kΩ) for switching, inverter, interface, and driver circuits. It is offered in a TO‑92S package and is intended as a complement to the FINS4208R part.
The datasheet lists absolute maximum ratings such as 50 V collector‑base and collector‑emitter voltages, a 100 mA collector current limit, and a 300 mW power dissipation rating. Electrical specifications include a 56 DC current gain, 0.3 V collector‑emitter saturation voltage, and a 250 MHz current‑gain bandwidth product. Package dimensions and trademark information are also provided.
| Collector-Base Voltage (V_CBO) | 50 V |
|---|---|
| Collector-Emitter Voltage (V_CEO) | 50 V |
| Emitter-Base Voltage (V_EBO) | 10 V |
| Collector Current (I_C) | 100 mA |
| Collector Power Dissipation (P_C) | 300 mW |
| Junction Temperature (T_J) | 150 °C |
| Storage Temperature (T_STE) | -55 ~ 150 °C |
| Input Resistor (R_y) | 47 kΩ |
It includes a built‑in bias resistor of 47 kΩ (Ry) and a resistor Rg of 22 kΩ.
The device is rated for a maximum collector current of 100 mA.
The absolute maximum collector‑base voltage is 50 V.