TP0101K is a low-threshold P-channel 20-V (D-S) MOSFET from Vishay Siliconix. It is ESD protected and is suitable for use in driver circuits, battery-powered systems, DC/DC converters, power supply converter circuits, load/power switching, cell phones, and pagers.
The TP0101K is a new Vishay Siliconix P‑channel MOSFET designed for low‑threshold applications such as drivers, relays, solenoids, lamps, hammers, displays, memory devices, battery‑operated systems, DC/DC converters, and power‑switching circuits. It features TrenchFET® technology, 3000 V ESD protection, and is offered in a TO‑236 (SOT‑23) package.
Key electrical ratings include a drain‑source voltage of –20 V, gate‑source voltage of +8 V, power dissipation of 0.22 W at 70 °C, thermal resistance (junction‑to‑ambient) of 357 °C/W, and an operating temperature range from –55 °C to 150 °C. Detailed characteristic curves for on‑resistance, gate charge, and transient behavior are provided in the datasheet.
| Drain‑Source Voltage (VDS) | -20 V |
|---|---|
| Gate‑Source Voltage (VGS) | +8 V |
| Power Dissipation (PD) | 0.22 W @ 70 °C |
| Thermal Resistance (RθJA) | 357 °C/W |
| Operating Temperature Range | -55 °C to 150 °C |
The TP0101K is rated for a drain‑source voltage of –20 V.
It can operate from –55 °C up to 150 °C.
The junction‑to‑ambient thermal resistance is 357 °C/W.
The device can dissipate up to 0.22 W at 70 °C.