This document describes the features and characteristics of a low voltage drop voltage regulator diode product, which has a low profile package, built-in strain relief, low inductance, and is suitable for high temperature soldering and RoHS environment. The product model range is from 6.8V to 100V, with a power rating of 3.0 watts.
This document lists the key features of the 1SMB3EZ6.8~1SMB3EZ100 silicon Zener diodes, including a low‑profile JEDEC DO‑214AA package, built‑in strain relief, low inductance, and typical leakage current below 1.0 µA above 11 V. It also specifies the UL 94V‑0 flammability rating, high‑temperature soldering capability (260 °C for 10 s), and availability of lead‑free versions.
Mechanical data describe the case type, terminal plating, and standard tape packaging. Electrical characteristics cover voltage range (6.8 V to 100 V), maximum power dissipation (3 W), and thermal considerations. An application note explains how to calculate junction temperature and provides guidance for reliable operation under pulsed and DC conditions.
| Voltage range | 6.8 to 100 V |
|---|---|
| Maximum power dissipation | 3.0 W |
| Package type | JEDEC DO‑214AA, molded plastic |
| Typical leakage current | < 1.0 µA above 11 V |
| UL flammability rating | 94V‑0 |
| High‑temperature soldering | 260 °C for 10 s |
| Lead‑free version | 99 % Sn meets RoHS |
| Weight | 0.003 oz (0.093 g) |
The typical leakage current is less than 1.0 µA when the reverse voltage is above 11 V.
The device can be soldered at 260 °C for 10 seconds at the terminals.
The diode is rated for a maximum power dissipation of 3.0 W.
It uses a JEDEC DO‑214AA molded plastic package.