The PTF 10136 is a 6-watt GOLDMOS FET intended for large signal amplifier applications from to 1.0 GHz. It operates at 57% efficiency with 19 dB typical gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.
The Ericsson PTF 10136 is a 6‑W GOLDMOS LDMOS field‑effect transistor designed for large‑signal amplifier applications up to 1 GHz. It features silicon‑nitride surface passivation and full gold metallization for excellent device lifetime and reliability.
The device delivers 6 W output at 1 dB compression with a typical power gain of 19 dB and 57 % drain efficiency. It is supplied in a surface‑mountable 20244 package and includes extensive RF, impedance, and scattering‑parameter data.
| Output Power at 1 dB Compression | 6.0 W (typ) |
|---|---|
| Gate‑Source Voltage | +20 V |
| Total Device Dissipation | 39 W |
| Operating Junction Temperature | 200 °C |
| Package | 20244 |
The PTF 10136 delivers a typical output power of 6 W at 1 dB compression.
It is supplied in the surface‑mountable 20244 package.