The PTF 10149 is an internally matched 70-watt GOLDMOS FET intended for cellular and GSM amplifier applications from 921 to 960 MHz. It operates with 50% efficiency and 16 dB typical gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.
The Ericsson PTF 10149 is an internally matched 70-watt GOLDMOS FET intended for cellular and GSM amplifier applications operating from 921 to 960 MHz. It features nitride surface passivation and full gold metallization to ensure excellent device lifetime and reliability, with typical power gain of 16 dB and efficiency of 50%.
| Frequency Range | 921 to 960 MHz |
|---|---|
| Output Power | 70 Watts |
| Power Gain | 16.0 dB Typ |
| Efficiency | 50% Typ |
| Drain-Source Breakdown Voltage | 65 Volts |
| Operating Junction Temperature | 200 °C |
| Total Device Dissipation | 197 Watts |
| Thermal Resistance | 0.89 °C/W |
The typical power gain at 960 MHz and 26 Volts is 16.0 dB.
The device is intended for applications from 921 to 960 MHz.
The device uses Package 20252.