The document describes the features and characteristics of TP0202K Vishay Siliconix's P-Channel 30-V (D-S) MOSFET product.
The TP0202K is a P‑Channel MOSFET designed for high‑side switching, low‑voltage operation and fast switching applications. Key features include a typical on‑resistance of 1.2 Ω, a low gate‑threshold of –2.0 V and a switching speed of 14 ns.
The datasheet provides absolute maximum ratings, detailed electrical specifications such as a –30 V drain‑source voltage rating, 31 pF input capacitance and typical on‑resistance values at various gate biases. Typical characteristic curves illustrate drain current, on‑resistance versus gate voltage, and thermal impedance for design reference.
| Drain‑Source Voltage (VDS) | -30 V |
|---|---|
| On‑Resistance (rDS(on)) | 1.2 Ω (typ) |
| Gate‑Threshold Voltage (VGS(th)) | -2.0 V (typ) |
| Switching Speed | 14 ns (typ) |
| Input Capacitance (Ciss) | 31 pF (typ) |
The maximum drain‑source voltage is –30 V.
The typical on‑resistance is 1.2 Ω.
The typical gate‑threshold voltage is –2.0 V.
The typical switching speed is 14 ns.