VISHAY SILICONIX - TP0610K Vishay Siliconix New Product Document Number: 71411 S-04279 Rev. C 16-Jul-01 Manual

TP0610K Vishay Siliconix is a new product of P-channel 60V (D-S) MOSFET, with low on-resistance, low threshold, fast switching speed, low input capacitance, gate-source ESD protection, ease in driving switches, low offset (error) voltage, low-voltage operation, high-speed circuits, etc. It can be used to drive relays, solenoids, lamps, hammers, displays, memories, transistors, etc. It is also suitable for battery operated systems, power supply converter circuits, and solid state relays.


VISHAY SILICONIX - TP0610K Vishay Siliconix New Product Document Number: 71411 S-04279 Rev. C 16-Jul-01 Manual - cover page
Brand
Vishay
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
4
File format
PDF
File size
48 KB
Published
02 May, 2012
Updated
01 October, 2023
MD5 checksum
AFAE459159B6F21943634EB9035AAEE1

About this manual

The TP0610K is a P‑channel MOSFET designed for high‑side switching applications. It features a low typical on‑resistance of 6 mΩ, a low threshold voltage around –2 V, fast switching speed (≈20 ns), and integrated gate‑source ESD protection up to 2000 V.

Typical applications include drivers for relays, solenoids, lamps, and other low‑voltage, high‑speed circuits. The device is supplied in a TO‑236 (SOT‑23) surface‑mount package and is suitable for battery‑operated systems, solid‑state relays, and power‑supply converter circuits.

What's inside

  • Product Summary
  • Features & Benefits
  • Applications
  • Absolute Maximum Ratings
  • Specifications
  • Typical Characteristics
  • Notes

Specifications

Drain‑Source Voltage (VDS)-60 V
Gate‑Source Voltage (VGS)+20 V
On‑Resistance (RDS(on))6 mΩ (typ)
Gate Threshold Voltage (VGS(th))-2 V (typ)
Total Gate Charge (Qg)17 nC
Input Capacitance (Ciss)23 pF

Frequently asked questions

What is the maximum drain‑source voltage rating?

The TP0610K can withstand a drain‑source voltage of up to –60 V.

What is the typical on‑resistance of the device?

The typical on‑resistance is 6 mΩ.

Does the MOSFET include ESD protection?

Yes, it has gate‑source ESD protection rated at 2000 V.

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