The document describes the STP4NK60Z series N-channel 600V power MOSFET from ST, which has extremely high dv/dt capability and very low intrinsic capacitances. This series is suitable for high current, high speed switching, and off-line power supply applications.
The STP4NK60Z series comprises high‑voltage, low‑on‑resistance Power MOSFETs with built‑in gate‑source Zener diodes for enhanced ESD protection. They are optimized for high‑current, high‑speed switching applications such as offline power supplies, adapters, PFC circuits and lighting.
The series is offered in multiple TO‑220, DPAK, IPAK and D2PAK packages, with detailed electrical, thermal and mechanical data provided for designers. Absolute maximum ratings, typical on‑resistance, switching times and avalanche characteristics are listed to aid component selection.
| Drain‑source voltage (VDS) | 600 V |
|---|---|
| Single‑pulse avalanche energy (EAS) | 120 mJ |
The MOSFETs are rated for a maximum drain‑source voltage of 600 V.