This document describes the features and characteristics of M29F800DT and M29F800DB 8 Mbit flash memory, including supply voltage, access time, programming time, memory blocks, programming/erase controller, etc.
The M29F800DT and M29F800DB are 8 Mbit non‑volatile flash memory devices (1 M × 8 or 512 K × 16) that operate from a single 5 V supply. The memory is organized into 19 blocks – one boot block, two parameter blocks and sixteen main blocks – allowing independent erase and protection of each block. The devices are offered in SO44 and TSOP48 (12 × 20 mm) packages and are supplied fully erased.
Key features include a typical programming time of 10 µs per byte/word, access times of 55‑90 ns, 100 000 program/erase cycles per block, a 64‑bit security code, and an embedded program/erase controller with erase‑suspend and resume modes. The command set follows JEDEC standards and includes a Common Flash Interface (CFI) for easy identification and configuration.
| Supply Voltage | 5 V (+10% for program, erase, read) |
|---|---|
| Access Time | 55‑90 ns |
| Programming Time | 10 µs per byte/word (typical) |
| Memory Capacity | 8 Mbit (1 M × 8 or 512 K × 16, Boot Block) |
| Number of Memory Blocks | 19 blocks (1 boot, 2 parameter, 16 main) |
| Endurance | 100 000 program/erase cycles per block |
| Security Code Length | 64 bits |
The devices operate from a 5 V supply, with a tolerance of +10 % for programming, erasing, and reading.
Each block is rated for 100 000 program/erase cycles.
The device contains 19 blocks: one boot block, two parameter blocks, and sixteen main blocks, which can be erased and protected independently.