The IDT6116SA/LA is a 16,384-bit high-speed static RAM organized as 2K x 8. It is fabricated using IDT's high-performance, high-reliability CMOS technology. Access times as fast as 15ns are available. The circuit also offers a reduced power standby mode. When CS goes HIGH, the circuit will automatically go to, and remain in, a standby power mode, as long as CS remains HIGH. This capability provides significant system level power and cooling savings. The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1µW to 4µW operating off a 2V battery. All inputs and outputs of the IDT6116SA/LA are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clock.
The IDT6116SA/LA is a 16,384‑bit (2K × 8) high‑speed static RAM fabricated in IDT's high‑performance CMOS process. It offers fast access times (as low as 15 ns), low power consumption, and TTL‑compatible I/O. The low‑power LA version includes a battery‑backup data‑retention mode.
The device is offered in multiple 24‑pin packages (ceramic and plastic DIP, SOIC, and SOJ) and qualified for military, commercial, and industrial temperature ranges. Detailed electrical characteristics, timing diagrams, and ordering information are provided in the datasheet.
| Memory size | 16 Kbit (2K × 8) |
|---|---|
| Access time | 15 ns (minimum) |
| Supply voltage | 5.0 V ±10 % |
| Package types | 24‑pin DIP, 24‑pin SOIC, 24‑pin SOJ |
| Temperature range (military) | 55 °C to +125 °C |
| Temperature range (commercial) | 0 °C to +70 °C |
| Temperature range (industrial) | -40 °C to +85 °C |
The device can achieve access times as fast as 15 ns.
It is offered in 24‑pin ceramic and plastic DIP, 24‑pin SOIC, and 24‑pin SOJ packages.