The RF3809 is a GaAs pre-driver power amplifier, specifically designed for wireless infrastructure applications. Using a highly reliable GaAs HBT fabrication process, this high-performance single-stage amplifier achieves high output power over a broad frequency range. The RF3809 also provides excellent efficiency and thermal stability through the use of a thermally-enhanced surface-mount plastic-slug package. Ease of integration is accomplished through the incorporation of an optimized evaluation board design provided to achieve proper 50 Ω operation. Various evaluation boards are available to address a broad range of wireless infrastructure applications: NMT 450 MHz; GSM850 MHz; GSM9
The RF3809 is a GaAs HBT pre‑driver amplifier designed for base‑station and other wireless infrastructure applications. It provides high output power, high linearity and high efficiency in a thermally‑enhanced surface‑mount package, and can be used as a driver stage or as a second/third stage LNA.
Key specifications include a P1dB of +33 dBm (≈2 W), gain of 13 dB, total efficiency around 45 % at P1dB, and operation from 450 MHz to 2500 MHz. The device is supplied at 8 V (VCC = VBIAS = VREF) with a typical bias current of 15 mA, and evaluation boards are available for multiple bands such as GSM, DCS, PCS and UMTS.
| Output Power (P1dB) | +33.0 dBm |
|---|---|
| Frequency Range | 450 MHz – 2500 MHz |
| Total Efficiency @ P1dB | 45.0 % |
| Gain (S21) | 13 dB |
| Input Return Loss (S11) | -16 dB |
| Output Return Loss (S22) | -5.5 dB |
| OIP3 | 46.5 dBm |
| Supply Voltage (VCC/VBIAS/VREF) | 8 V (typical) |
The RF3809 delivers a P1dB of +33 dBm, which is about 2 W of output power.
The device is specified for a nominal supply of 8 V (VCC = VBIAS = VREF).
Evaluation boards are available for NMT 450 MHz, GSM850, GSM900, DCS1800, PCS1900 and UMTS2200 bands.
For 5 V operation the bias resistor should be set to 47 Ω, as described in the bias table.