The SZP-3026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor (HBT) power amplifier from RFMD. It is designed with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed for use as a driver or final stage power amp for 802.16 equipment in the 3.0GHz to 3.8GHz bands. It is pre-matched on both ports to simplify external application circuit design. It features an input power detector, on/off power control, ESD protection, excellent overall robust- ness, and a hand reworkable and thermally enhanced surface-mount SOF-26 package.
The SZP-3026Z is a high‑linearity, single‑stage class‑AB HBT power amplifier designed for 802.16 Wi‑MAX and 802.11g applications in the 3.0 GHz to 3.8 GHz band. It is pre‑matched on both ports, includes an on‑chip power detector, and is supplied in a hand‑reworkable SOF‑26 surface‑mount package.
Key features include a VBIAS of 5 V, up to 33.2 dBm output power at 1 dB compression, small‑signal gain of up to 12 dB, and a noise figure of 5.1 dB. The datasheet provides absolute maximum ratings, typical performance curves, pin descriptions, and an application schematic.
| Frequency of Operation | 3.0–3.8 GHz |
|---|---|
| Output Power at 1 dB Compression | 33.2 dBm |
| Small Signal Gain | 10.5–12.0 dB |
| Noise Figure | 5.1 dB |
| VBIAS (Supply Voltage) | 5 V |
| Power Dissipation | 6 W |
The device is designed to operate with a VBIAS of 5 V.
The amplifier can deliver up to 33.2 dBm output power at 1 dB compression.
VDET is the output port for the on‑chip power detector that samples the input power.
Yes, the part is lead‑free and RoHS compliant.