This document describes the features of the smart highside power switch PROFET® BTS 432 I2 from Semiconductor Group, including load dump and reverse battery protection, clamp of negative voltage at output, short-circuit protection, current limitation, thermal shutdown, diagnostic feedback, etc.
The BTS 432 I2 is a Smart High‑side Power Switch designed for 12 V and 24 V DC grounded loads. It integrates a N‑channel vertical power FET with a charge‑pump and CMOS‑compatible input, offering diagnostic feedback and a range of built‑in protection functions.
The document lists pin assignments, maximum ratings, electrical characteristics, and detailed protection functions such as load‑dump, reverse‑battery, short‑circuit, over‑ and undervoltage, and ESD protection. Package dimensions and ordering codes are also provided.
| Supply voltage (overvoltage protection) | 63 V |
|---|---|
| Power dissipation (DC) | 125 W |
| ESD capability (Human Body Model) | 2.0 kV |
| Operating temperature range (Tj) | -40 °C to +150 °C |
| Input voltage (DC) | -0.5 V to +6 V |
| On‑state resistance (typical) | 30 mΩ |
The device can tolerate up to 63 V as the over‑voltage protection limit.