This document describes the features and characteristics of the PROFET® BTS 442 D2 semiconductor product from Dinghao, including overload protection, current limitation, short-circuit protection, thermal shutdown, overvoltage protection, etc.
The BTS 442 D2 is a N‑channel vertical power FET with integrated charge pump and CMOS‑compatible input. It provides built‑in protection functions such as over‑voltage, undervoltage, short‑circuit, reverse‑battery and electrostatic discharge protection, making it suitable for replacing electromechanical relays in 12 V and 24 V DC grounded loads.
The document lists pin assignments, maximum ratings, electrical characteristics, protection functions, diagnostic features, and package dimensions for the TO‑220AB/5 version. It also includes truth tables and schematic references for designers integrating the device into automotive or industrial power‑switch applications.
| Operating voltage (Vbb) | 4.5 … 42 V |
|---|---|
| On‑state resistance (RON) | 18 mΩ |
| Maximum load current | 21 A |
| Power dissipation (DC) | 167 W |
| ESD protection capability | 2.0 kV (HBM) |
| Thermal overload trip temperature | 150 °C |
The device can handle up to 21 A of load current as specified in the maximum ratings.
The on‑state resistance (RON) is 18 mΩ at 25 °C.
The device is supplied in a standard TO‑220AB/5 package.