This document describes the features and characteristics of the Smart Highside Power Switch PROFET BTS 432 I2 from Semiconductor Group, including load dump and reverse battery protection, clamp of negative voltage at output, short-circuit protection, current limitation, thermal shutdown, diagnostic feedback, etc.
The PROFET® BTS 432 I2 is a smart high‑side power switch designed for 12 V and 24 V DC grounded loads. It integrates a vertical N‑channel power FET with a charge‑pump and CMOS‑compatible input, offering built‑in protection functions such as load‑dump, reverse‑battery, short‑circuit, over‑voltage, under‑voltage, and ESD protection.
The document lists detailed electrical characteristics, maximum ratings, pin assignments, and package information. Key parameters include supply voltage limits, on‑state resistance, thermal shutdown thresholds, and inductive load switch‑off energy dissipation, enabling designers to select and implement the device in a variety of resistive, inductive, and capacitive load applications.
| Supply voltage (overvoltage protection) | 63 V |
|---|---|
| Power dissipation (DC) | 125 W |
| Operating temperature range | -40 … 150 °C |
| Input voltage (DC) | -0.5 … +6 V |
| ESD capability (Human Body Model) | 2.0 kV |
The over‑voltage protection rating is 63 V.