TLP523, TLP523−2, TLP523−4 are photocouplers from TOSHIBA, which consist of a gallium arsenide infrared emitting diode and a silicon darlington-connected phototransistor. They have optimized switching speed and elevated temperature characteristics. TLP523−2 offers two isolated channels, while TLP523−4 provides four isolated channels. The features include a minimum current transfer ratio of 500% (IF = 1 mA), isolation voltage of 2500 Vrms (min.), collector-emitter voltage of 55 V (min.), leakage current of 10μA (max.) (Ta = 85°C), and UL recognition. The weights of the products are 0.26 g, 0.54 g, and 1.1 g respectively.
The Toshiba TLP523 series (TLP523, TLP523-2, TLP523-4) are GaAs infrared emitting diode optocouplers with a silicon Darlington phototransistor. They provide isolation voltages up to 2500 Vrms and current transfer ratios of at least 500 %.
These devices are intended for general electronics applications such as computers, office equipment, measuring instruments, and industrial robotics. The datasheet includes absolute maximum ratings, recommended operating conditions, and switching characteristics to aid designers in reliable circuit implementation.
| Current Transfer Ratio (CTR) min | 500 % |
|---|---|
| Isolation Voltage (min) | 2500 Vrms |
| Collector‑Emitter Voltage (VCEO) min | 55 V |
| Leakage Current max | 10 pA |
| Operating Temperature Range | -55 °C to 100 °C |
| Supply Voltage (recommended) | 5 V to 24 V |
| Maximum Collector Current | 150 mA |
The isolation voltage is rated at a minimum of 2500 Vrms.
A supply voltage between 5 V and 24 V is recommended.
The device can handle up to 150 mA of collector current.