This document introduces the features and applications of NPN/PNP Silicon Power Darlington Transistors TIP122F NPN and TIP127F PNP, including general-purpose amplifier and low-speed switching applications. It provides detailed information on their absolute maximum ratings, thermal resistance, and electrical characteristics.
The TIP122F (NPN) and TIP127F (PNP) are silicon power Darlington transistors designed for general‑purpose amplifier and low‑speed switching applications. The datasheet lists absolute maximum ratings, electrical characteristics, and thermal data for reliable design use.
Key specifications include collector‑base voltage of 100 V, collector‑emitter voltage of 100 V, continuous collector current of 5 A, and a total power dissipation of 65 W at 25 °C. The devices are supplied in a fully isolated TO‑220FP plastic package with detailed pin configuration and packing information.
| Collector‑Base Voltage (VCBO) | 100 V |
|---|---|
| Collector‑Emitter Voltage (VCEO) | 100 V |
| Emitter‑Base Voltage (VEBO) | 5.0 V |
| Continuous Collector Current (IC) | 5.0 A |
| Peak Collector Current (ICM) | 8.0 A |
| Base Current (IB) | 120 mA |
| Total Power Dissipation (PD) @ 25 °C | 65 W |
| Junction Temperature (Tj) Max | 150 °C |
| Storage Temperature Range (Tstg) | -65 to +150 °C |
| Thermal Resistance Junction‑to‑Ambient (Rth(j‑a)) | 62.5 °C/W |
The maximum collector‑emitter voltage is 100 V.
The devices can dissipate up to 65 W at 25 °C.
They are supplied in a fully isolated TO‑220FP plastic package.
The maximum junction temperature is 150 °C.