This document provides technical specifications for the Transys BDV64 series of PNP silicon power darlington transistors. The devices are available in four variants (BDV64, BDV64A, BDV64B, and BDV64C) with collector-base voltage ratings ranging from -60V to -120V.
| Continuous Collector Current | -12 A |
|---|---|
| Peak Collector Current | -15 A |
| Continuous Device Dissipation (25°C Case) | 125 W |
| Operating Junction Temperature Range | -65 to +150 °C |
The device supports a continuous collector current of -12 A.
It has a maximum continuous device dissipation of 125 W at or below 25°C case temperature.
The operating junction temperature ranges from -65 to +150 °C.