This document describes the features and characteristics of the TIP120/121/122 Darlington power transistors, which are designed for general-purpose amplifier and low-speed switching applications.
The TAITRON TIP120/121/122 series are NPN Darlington power transistors designed for general‑purpose amplifier and low‑speed switching applications. The devices are supplied in a TO‑220 plastic package with solderable terminals and are RoHS compliant.
Key electrical ratings include collector‑base voltage up to 100 V, collector‑emitter voltage up to 100 V, continuous collector current of 5 A (peak 8 A), and a maximum power dissipation of 65 W at 25 °C. Mechanical dimensions, pin configuration, and thermal resistance values are also provided.
| Collector‑Base Voltage (VcBo) | 60 V (TIP120), 80 V (TIP121), 100 V (TIP122) |
|---|---|
| Collector‑Emitter Voltage (VcEO) | 60 V (TIP120), 80 V (TIP121), 100 V (TIP122) |
| Emitter‑Base Voltage (VEBO) | 5.0 V |
| Continuous Collector Current (Ic) | 5.0 A |
| Peak Collector Current (Icom) | 8.0 A |
| Base Current (IB) | 120 mA |
| Power Dissipation (TC=25 °C) | 65 W |
| Power Dissipation (TA=25 °C) | 2.0 W |
| Thermal Resistance Junction‑to‑Ambient | 62.5 °C/W |
| Thermal Resistance Junction‑to‑Case | 1.92 °C/W |
| Operating Temperature Range | -65 °C to +150 °C |
| Package Type | TO‑220, Plastic Package |
The maximum continuous collector current is 5.0 A (peak 8.0 A).
They are housed in a TO‑220 plastic package with solderable terminals.
The devices can dissipate up to 65 W when the case temperature is 25 °C.
TIP120: 60 V, TIP121: 80 V, TIP122: 100 V.