This document provides an overview of the activities of SEMiNEWS China in the second half of 2009, as well as the introduction of their new product sKiiP® 4 intelligent power module. The sKiiP® 4 module has a longer lifespan and higher operating temperature compared to modules using welding technology. It is suitable for applications in wind energy, solar energy, power traction, and high-power industrial drives.
The SKiiP® 4 is a next‑generation intelligent power module (IPM) that uses sintered chip connections and a pressure‑contact system, giving it a longer lifetime and the ability to operate at higher temperatures. It integrates a heat sink, power module, driver and protection sensors in a compact package, and offers versions for 1200 V and 1700 V.
Designed for high‑power renewable‑energy and industrial applications, the module supports output currents up to 3600 A, a 33 % increase in power density over the SKiiP® 3, and can be used in wind turbines, solar inverters, traction drives, elevators and large‑scale industrial drives. The sintered connection provides a thin silver layer with thermal resistance far lower than welded joints, enabling reliable operation under extreme thermal cycling. This manual is written in Chinese.
| Maximum DC voltage (Udc) | 1200 V |
|---|---|
| Nominal current (Ic) | 1800 A |
| Irms1 (effective current) | 1315 A |
| Irms2 (150 % overload, 60 s) | 825 A |
| Power density increase over SKiiP® 3 | 33 % |
| Maximum output current | 3600 A |
| Available voltage versions | 1200 V and 1700 V |
The SKiiP® 4 can deliver up to 3600 A of output current.
It is available in 1200 V and 1700 V versions.
The chips are joined to the DCB board by a sintered (burn‑in) process using a thin silver layer.
It offers a 33 % higher power density compared with the SKiiP® 3.