This document describes the features and characteristics of the M54HC00 and M74HC00 products, including high-speed performance, low power consumption, high noise immunity, wide operating voltage range, etc.
The M54HC00 and M74HC00 are high‑speed CMOS quad 2‑input NAND gates with low power dissipation and high noise immunity. The document provides the functional description, truth table, pin assignments and schematic circuit for each gate.
Detailed electrical characteristics include supply voltage ranges, input and output voltage thresholds, propagation delays and power dissipation. Mechanical data for various package types (Plastic DIP‑14, Ceramic DIP‑14, SO‑14, PLCC‑20) are also listed, along with absolute maximum ratings and recommended operating conditions.
| Supply Voltage (Absolute Maximum) | -0.5 V to +7 V |
|---|---|
| Input High Level Voltage (VIH) – Typical | 2.0 V |
| Output High Voltage (VOH) – Typical | 4.5 V |
| Propagation Delay (tPHL) – Typical | 9 ns |
| Propagation Delay (tPLH) – Typical | 8 ns |
| Power Dissipation (per gate) | 500 mW |
| Storage Temperature Range | -65 °C to +150 °C |
| Lead Temperature (10 s) | 300 °C |
Each gate can dissipate up to 500 mW.
tPHL is about 9 ns and tPLH is about 8 ns under typical conditions.