Industrial

The M54/74HCT00 is a high speed CMOS QUAD 2-INPUT NAND GATE fabricated in silicon gate C2MOS technology. It has the same highspeed per- formance of LSTTL combined with true CMOS low power consumption. The internal circuit is com- posed of 3 stages including buffer output, which en- ables high noise immunity and stable output. All inputs are equipped with protection circuits against static discharge and transient excess voltage. This integrated circuit has input and output charac- teristics that are fully compatible with 54/74 LSTTL logic families. M54/74HC devices are designed to directly interface HSC2MOS systems with TTL and NMOS components. They are also plug in replace- ments for LSTTL devices giving a reduction of power consumption.

M74HC05 is an high speed CMOS HEX INVERTER (OPEN DRAIN) fabricated with silicon gate C2MOS technology. The internal circuit is composed of 3 stages including buffer output, which enables high noise immunity and stable output. All inputs are equipped with protection circuits against static discharge and transient excess voltage.

This document introduces a 32 Mbit flash memory chip called M59DR032A and M59DR032B, which features low voltage supply, fast programming and erasing, dual bank memory array, block protection/unlocking, etc.

M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 16 Mbit (512Kb x32, Boot Block, Burst) 3V Supply Flash Memories PE4 features high performance, low power consumption and so on, mainly applied to portable devices, networks, automobiles, industrial, consumer electronics and other fields.

The M54/74HC423/423A are high speed CMOS MONOSTABLE multivibrators fabricated with silicon gate C2MOS technology. They achieve the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation. There are two trigger inputs, A INPUT (negative edge) and B INPUT (positive edge). These inputs are valid for rising/falling signals, (tr – tf – 1 sec). After triggering the output maintains the MONOSTABLE state for the time period determined by the external resistor Rx and capacitor Cx. Two different pulse width constant are available: K ≅ 0.46 for HC423 K ≅ 1 for HC423A. Taking CLR low breaks this MONOSTABLE STATE. If the next trigger pulse occurs during the MONOSTABLEp

M54HC251M74HC251 is an 8-bit SIPO shift register with a wide operating voltage range of 2V-6V and high speed and low power consumption.

The M48T58 M48T58Y 5.0V, 64 Kbit (8 Kb x 8) TIMEKEEPER® SRAM is a Toshiba integrated ultra low power SRAM, real time clock, power fail control circuit and battery product. The product has BCD coded YEAR, MONTH, DAY, DATE, HOURS, MINUTES and SECONDS; frequency test output for real time clock; automatic power fail chip deselect and write protection; write protection voltage (VPFD=power fail deselect voltage): - M48T58: VCC=4.75 to 5.5V 4.5V≤VPFD≤4.75V - M48T58Y: VCC=4.5 to 5.5V 4.2V≤VPFD≤4.5V. The product uses self-contained battery and crystal SNAPHAT™DIP package, including 28-lead SOIC and SNAPHAT®TOP (to be ordered separately). SOIC package provides direct connection to a SNAPHAT housing containing the battery and crystal, and is compatible with JEDEC standard 8Kb x 8 SRAM pins and functions.

M48T35, M48T35Y are TIMEKEEPER® SRAMs produced by Microchip Technology with 256 Kbit (32Kb x8) capacity, which integrate an ultra-low-power SRAM, real-time clock, power-fail control circuit and battery. It features byte-wide RAM-like clock access, BCD coded year, month, day, date, hours, minutes and seconds, frequency test output for real-time clock, automatic power-fail chip deselect and write protection, write protect voltages of 4.5V ≤ VPFD ≤ 4.75V, 4.2V ≤ VPFD ≤ 4.5V, self-contained battery and crystal in the CAPHAT DIP package, SOIC package provides direct connection to a SNAPHAT housing containing the battery and crystal, SNAPHAT® housing (battery and crystal) is replaceable, and is pin and function compatible with JEDEC standard 32Kb x8 SRAMs.

The M41T80 is a serial access RTC chip with alarms. It operates at a voltage of 2.0-5.5V and has counters for tenths/hundredths of seconds, seconds, minutes, hours, day, date, month, year, and century. It supports the I2C bus (400KHz) and has programmable alarm and interrupt functions. It has a working current of 200µA and a working temperature of -40 to 85°C.

This document is the specification of 512MB, 1GB, 2GB Registered DIMMs DDR2 SDRAM DDR2 Registered SDRAM MODULE 240pin Registered Module based on 512Mb C-die 72-bit ECC

M366S0924FTS is a 64MB SDRAM unbuffered DIMM based on 128Mb F-die. It supports 62/72-bit non ECC and ECC.

M29W641DH, M29W641DL, M29W641DU 64 Mbit (4Mb x16, Uniform Block) 3V Supply Flash Memory features include supply voltage, access time, program time, storage block, program/erase controller, erase suspend and resume modes, unlock bypass program command, write protection options, temporary block unprotection mode, common flash interface, extended memory block, low power consumption and electronic signature

M29F200T and M29F200B are 2 Mbit (256Kb x8 or 128Kb x16, Boot Block) Single Supply Flash Memory. It features fast access time, fast programming time and low power consumption.

Summary of M27C512 512 Kbit (64K x8) UV EPROM and OTP EPROM

M27C4002 is a 4Mbit EPROM available in both UV (ultra violet erase) and OTP (one time programmable) versions. It is ideally suited for microprocessor systems requiring large programs and is organised as 262,144 words of 16 bits.