Industrial

This application note provides implementation solutions for In-Application Programming (IAP) using the STM32F407/STM32F417 Ethernet communications interface. Two possible solutions are provided on top of the LwIP TCP/IP stack: TFTP and HTTP.

This document describes the software solution for substituting standalone EEPROM by emulating the EEPROM mechanism using the on-chip Flash of STM32F40x/STM32F41x devices.

FDP7030BL/FDB7030BL N-Channel Logic Level PowerTrench MOSFET is a low RDS(ON), low gate charge, high switching speed N-channel logic level MOSFET produced by Fairchild Semiconductor Corporation. It adopts TO-220 FDP series and TO-263AB FDB series package.

FDP7030L and FDB7030L are Fairchild's high density DMOS N-Channel logic level enhancement mode power field effect transistors. These devices are particularly suited for low voltage applications such as DC/DC converters and switch mode power supplies.

FDP6670S/FDB6670S 30V N-Channel PowerTrench SyncFET™ is a 30V MOSFET designed by Fairchild Semiconductor Corporation with low RDS(ON) and low gate charge, suitable for synchronous DC:DC power supplies as a low-side switch.

This document is the datasheet of FDP6676S/FDB6676S, which introduces the features of the product, including product model, package, pin, typical application circuit, characteristic parameters, etc.

FDP6690S/FDB6690S 30V N-Channel PowerTrench SyncFET™ is a N-channel MOSFET designed for synchronous DC:DC power supplies. This MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge.

FDP6670AS/FDB6670AS 30V N-Channel PowerTrench® SyncFET™ is a MOSFET designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. It is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge.

FDP6670AL/FDB6670AL is a logic level MOSFET that features faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. It is optimized for low gate charge, low RDS(ON) and fast switching speed.

This document describes a 30V N-channel power MOSFET designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. It features low RDS(ON) and low gate charge to maximize power conversion efficiency. Additionally, the MOSFET includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology.

This document is about FDP6644/FDB6644 30V N-Channel PowerTrench MOSFET datasheet. The device has 50A, 30V, RDS(ON) = 8.5 mΩ @ VGS = 10 V, RDS(ON) = 10.5 mΩ @ VGS = 4.5 V, low gate charge (27 nC typical), fast switching speed, high performance trench technology, for extremely low RDS(ON) DC/DC power supply designs.

This application note describes the software solution for substituting standalone EEPROM by emulating the EEPROM mechanism using the on-chip Flash of STM32F2xx devices.

This document provides an overview of low power modes in the STM8TL53xx devices and explains how to reduce power consumption when using the ProxSense peripheral.