Industrial

This document describes the features of the FDPF44N25 UniFET TM N-Channel MOSFET. The product has a voltage rating of 250V, current rating of 18A, on-state resistance of 0.069Ω, low gate charge, and low Crss. It is suitable for high-efficiency switched mode power supplies and active power factor correction.

This document describes the concept, causes, and risks of electrostatic discharge (ESD). It also discusses methods for simulating and testing ESD in electronic devices, as well as common ESD protection techniques. Test results are presented for the STM8T142-EVAL evaluation board, using some of the protection methods detailed in this application note.

FDP8896 is a N-Channel PowerTrench® MOSFET from Fairchild Semiconductor Corporation with a maximum voltage of 30V, maximum current of 92A and a ON resistance of 5.9mΩ. It is suitable for DC/DC converters.

FDD8880 is an N-Channel PowerTrench® MOSFET from Fairchild Semiconductor Corporation. It has a feature of rDS(ON) = 11.6mΩ, VGS = 10V, ID = 40A, and can be used for DC/DC converters.

This document provides guidelines for creating an in-application programming (IAP) application using the USART feature of the STM32F40x/STM32F41x microcontrollers.

The FDP8874 is a N-channel MOSFET from Fairchild Semiconductor Corporation. It has a rated voltage of 30V and a maximum current of 114A. The typical on-resistance is 5.3mΩ. The device is manufactured using Trench technology and has low gate charge and high switching speed.

FDP8870 is a N-Channel MOSFET manufactured by Fairchild Semiconductor Corporation. It has a rated voltage of 30V and a rated current of 156A. Its features are low on-resistance (4.1mΩ) and fast switching speed.

This document describes an N-Channel Logic level power MOSFET specifically designed to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(on) specifications, making them easier and safer to drive (even at very high frequencies), and enabling DC/DC power supply designs with higher overall efficiency.

This document describes the features and characteristics of the FDP75N08 75V N-Channel MOSFET produced by Fairchild Semiconductor Corporation, including 75A current, 0.011Ω RDS(on), low gate charge, and low Crss.

This document presents a demonstration package built on top of the LwIP (Lightweight IP) TCP/IP stack which is an open source stack intended for embedded devices.

This application note provides a demonstration package based on the open source SSL/TLS library PolarSSL, which provides SSL/TLS migration and usage examples for STM32F417xx devices, supporting IP, UDP, TCP, ICMP protocols

This document is about the parameters of two MOSFET models FDP7045L and FDB7045L