Industrial

This document describes the features and parameters of three motors SuperTigre 370 400 .10, including input voltage, maximum current, maximum power, etc.

STGE200NB60S is an STMicroelectronics high voltage power device, belonging to the PowerMESH™ IGBT series, with outstanding performances. The suffix “S” identifies a family optimized to achieve very low VCE(sat) (@ max frequency of 1KHz). The device is suitable for low frequency motor controls and aluminum welding equipment applications.

STGP7NC60H - STGD7NC60H is a N-CHANNEL 14A - 600V TO-220/DPAK Very Fast PowerMESH™ IGBT from STMicroelectronics, featuring lower on-voltage drop, lower off losses, lower CRES/CIES ratio, high frequency operation up to 70 KHz and new generation products with tighter parameter distribution. It is suitable for high frequency inverters, SMPS and PFC in both hard switch and resonant topologies, and motor drivers.

STGD7NB60S is a high voltage insulated gate bipolar transistor launched by STMicroelectronics. It has the characteristics of high input impedance, low on-voltage drop, high current capacity, etc. The device uses DPAK packaging and is suitable for low frequency applications.

This document introduces a family of IGBTs from STMicroelectronics, based on high voltage technology. The IGBTs have features such as high input impedance, low on-voltage drop, off losses including tail current, low gate charge, high current capability, and high frequency operation. They are suitable for applications such as motor controls, SMPS, and PFC.

STGD7NB60H-1 is a N-channel 7A - 600V IPAK PowerMESH IGBT with outstanding perfomances designed by STMicroelectronics based on a patented strip layout. The suffix ”H” identifies a family optimized to achieve very low switching times for high frequency applications (<120kHz). It is used in high frequency motor controls, SMPS and PFC in both hard switch and resonant topologies.

STGD7NB60H is an N-channel IGBT produced by ST company. The rated voltage is 600V and the rated current is 7A. The working frequency can reach 50kHz.

This document provides preliminary information on a new product currently in development or undergoing evaluation. The product is a high-voltage power MOSFET with features such as high input impedance, low on-voltage drop, low gate charge, high current capability, and high frequency operation.

STGD7NB120S-1 is a N-CHANNEL 7A - 1200V IPAK Power MESH IGBT produced by STMicroelectronics. It has high input impedance (voltage driven), very low on-voltage drop (Vcesat), high current capability and off losses including tail current. The product is suitable for applications such as light dimmer, inrush current limitation and motor control.

stgd6nc60hd is a 6a - 600v n-channel igbt produced by stmicroelectronics. it has the characteristics of low voltage drop, low on-state losses, low recovery energy, high frequency operation, etc.

This document describes the features and characteristics of the STMicroelectronics STGD5NB120SZ-1 STGD5NB120SZ N-CHANNEL 5A - 1200V DPAK/IPAK internally clamped PowerMESH™ IGBT, released on January 13, 2005. These include high input impedance, low on-voltage drop (Vcesat), high current capability, off losses including tail current, and high voltage clamping features.

This document describes the features and characteristics of the STGD3NB60S N-CHANNEL 3A - 600V DPAK Power MESH IGBT, including high input impedance, very low on-voltage drop (Vcesat), high current capability, and surface-mounting DPAK (TO-252) power package.

STGD3NB60SD is a high voltage IGBT produced by STMicroelectronics. Its rated voltage is 600 V and its rated current is 3 A. It is packaged in a DPAK package.

STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances using the latest high voltage technology based on a patented strip layout. These IGBTs have very low switching times and are suitable for high frequency applications (<20KHZ). The document describes the features and characteristics of the STGP3NB60M and STGD3NB60M models.