Industrial

The PD7088, PD708C8 series are InGaAs photodiodes with a sensitive area of φ80µm. They are suitable for receiving light in the wavelength range of 1000 to 1600nm. The photodiodes feature high response speed and high quantum efficiency, and are suitable for optical fiber communication systems.

PD8XX2 Series are InGaAs avalanche photodiodes which has a sensitive area of φ50µm. PD8XX2 is suitable for receiving the light having a wavelength band of 1000 to 1600nm. This photodiode features high-speed response and a high responsivity, and is suitable for the light receiving elements for optical fiber communication systems.

This document describes the features and characteristics of MITSUBISHI PHOTO DIODES PD7XX7 series InGaAs PIN photodiodes. The series is suitable for receiving light in the wavelength range of 1000 to 1600nm. It features high-speed response and high quantum efficiency, making it suitable for light receiving elements in optical fiber communication systems.

The ML1XX21 series is a high-power, high-efficiency AlGaInP semiconductor laser that provides stable single transverse mode oscillation with an emission wavelength of 658nm and a standard pulse light output of 160mW. The ML1XX21 features a real-index waveguide that improves slope efficiency (reducing operating current) and astigmatic distance. Additionally, the ML1XX21 has a window-mirror-facet that improves maximum output power, resulting in highly reliable and high-power operation.

ML1XX23 series is a high-power, high-efficient AlGaInP semiconductor laser from Mitsubishi Electric Corporation that provides a stable, single transverse mode oscillation with an emission wavelength of 658nm and a standard pulse light output of 200mW. ML1XX23 has a real-index-waveguide which improves the slope efficiency (reduction of the operating current) and the astigmatic distance. Also, ML1XX23 has a window-mirror-facet which improves the maximum output power. That leads to highly reliable and high-power operation at 75 °C.

This document is about the evaluation board of the RD01MUS2B single-stage amplifier, with a frequency range of 890-941MHz and typical features such as input power of 30mW and output power of 1.5W.

This application note shows the TETRA data.

This application note provides design and use information for the RD01MUS2B single-stage amplifier. The amplifier operates in the 135-175MHz frequency range, with a typical input power of 30mW and a typical output power of 1.45W.

AN-UHF-130 is an application note for Silicon RF Power Semiconductors. It introduces RD04HMS2 & RD70HUF2 two-stage amplifier

Application Note for RD04HMS2 & RD70HUF2 two-stage amplifier

This document describes the RF performance of RD00HVS1 and RD02MUS1B 2-stage amplifiers at a frequency range of 400-470MHz and Vdd=7.2V. The evaluation conditions include frequency characteristics, Pout vs. Pin characteristics, and small signal S parameters. The document provides typical data for frequency characteristics, Pout vs. Pin characteristics, and small signal S parameters.

This application note provides the RF wide band characteristics data (Frequency, Pout vs. Pin, Pout vs. Vgg characteristics) at 135-175MHz band of RD01MUS2 and RD07MUS2B.

This document describes the features and performance parameters of the RD35HUF2 single-stage amplifier evaluation board, including frequency range, input power, output power, and adjacent channel power ratio.

This document is an application note for the RD04HMS2 and RD70HUF2 two-stage amplifier at 380-470MHz. It includes features such as an evaluation board, frequency range, input power, output power, etc.