MITSUBISHI Manuals

M54562P and M54562FP are eight-circuit output-sourcing Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. They feature high breakdown voltage, high-current driving, output clamping diodes, driving available with PMOS IC output of 6 ~ 16V or with TTL output, wide operating temperature range, and output current-sourcing type.

The M54561P is a seven-circuit output sourcing Darlington transistor array. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.

M54532P/FP is a four-circuit Darlington transistor array with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.

M54531P and M54531FP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors and perform high-current driving with extremely low input-current supply. They feature high breakdown voltage, high-current driving, clamping diodes, driving available with PMOS IC output, wide input voltage range, and wide operating temperature range.

M54530P and M54530FP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.

This document introduces the characteristics and features of the FX-20P-E series programmable logic controllers (PLCs).

M54525AGP is a seven-circuit Darlington transistor array with clamping diodes. It performs high-current driving with extremely low input-current supply.

M54523P and M54523FP are seven-channel Darlington transistor arrays with clamping diodes. These integrated circuits are made of NPN transistors and have extremely low input current supply and high current driving capability.

M54522P/FP is an 8-channel Darlington transistor array with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.

M54513P/FP 8-UNIT 50mA TRANSISTOR ARRAY is an 8-channel NPN transistor array, which provides high current output, high breakdown voltage, synchronous current and wide operating temperature range. This device can be used to drive LED and lamp indicators.

PM75B6LB060 is a power module produced by Mitsubishi Electric. It adopts new 5th generation IGBT chip and has high performance and small size.

PM75B6LA060 is a power module product produced by Mitsubishi Electric. It adopts the fifth-generation IGBT chip and has the characteristics of low voltage drop, high efficiency and small size.

The document introduces the features of the MITSUBISHI PM50B6LA060 flat-base insulated package produced in June 2005. It adopts the new 5th generation IGBT (CSTBT) chip, whose performance is improved by a 1µm fine rule process. It has over-temperature protection by detecting the Tj of the CSTBT chips and can output error signals from all the conservation upper and lower arms of the IPM. It also has a new small package, reducing the package size by 10% and thickness by 22% compared to the S-DASH series. It is suitable for photovoltaic power conditioners.

PM75B5LB060 is a new flat-base isolated package power module using Mitsubishi Electric's fifth-generation IGBT chip. It has the advantages of small size, excellent performance, over-temperature protection, etc.

PM50B5LB060 is a new IGBT module from Mitsubishi Electric. It uses 5th generation IGBT chip and has an output power of 2 phases 50A, 600V. It can be used for photovoltaic power conditioner applications.