International Rectifier Manuals

The IR2111(S) is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels designed for half-bridge applications.

The IR2111 is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels designed for half-bridge applications.

The IR2110L6 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.

This datasheet describes the features of IR2110E6 high and low side driver. The driver supports +600V floating channel design, can work normally under negative transient voltage and has dV/dt immunity. Its gate drive supply range is from 10 to 20V, has undervoltage lockout function. The logic supply range is from 5 to 20V, the logic and power ground voltage offset is ±5V. The driver has CMOS Schmitt-triggered inputs with pull-down resistor, has cycle by cycle edge-triggered shutdown logic, and the propagation delay of both channels is matched, and the outputs are synchronized with the inputs.

The document describes a high voltage, high speed power MOSFET and IGBT driver called IR2106(4)(S) with independent high and low side referenced output channels. It can drive an N-channel power MOSFET or IGBT in the high side configuration up to 600 volts. The product features a floating channel, designed for bootstrap operation, high pulse current buffer stage, and matched propagation delay.

The IR2106(4)(S) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with 3.3V, 5V and 15V, providing flexibility for circuit board layout.

The IR2105 is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels.

This data sheet provides information about IR2104(s), including its features, applications, pin configuration, etc.

PD60046-S is a high voltage, high speed power MOSFET and IGBT driver produced by IR company. The maximum working voltage can reach 600V, tolerant to negative transient voltage, and has shutdown lock and low voltage lock functions, supporting 3.3V, 5V and 15V logic input.

This document describes the features and characteristics of the IR2103(S) high voltage, high speed power MOSFET and IGBT drivers, such as floating channel design, bootstrap operation, negative transient voltage immunity, logic compatibility, etc.

The IR2101(S)/IR2102(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.

The IR2086S is a self oscillating full-bridge controller and driver IC with 50% duty cycle ideally suited for 36V-75V full-bridge DC Bus Converters.

IR2101/IR21014/IR2102/IR21024 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels.

The IR2101/IR2102 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Pro- prietary HVIC and latch immune CMOS technolo- gies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.

The document describes the features and characteristics of the IR2085S, a high-speed, 100V, self-oscillating 50% duty cycle, half-bridge driver. The product is suitable for half-bridge DC-bus converters in 48V distributed systems, reducing component count and board space. It features an integrated 50% duty cycle oscillator and half-bridge driver in a single SO-8 package. Each channel has a programmable switching frequency of up to 500kHz. The drive current capability is +/-1.0A, optimized for low charge MOSFETs. The adjustable dead-time ranges from 50ns to 200ns. The floating channel is designed for bootstrap operation up to +100Vdc. The high and low side pulse width matching is within +/-25ns. It also has adjustable overcurrent protection, undervoltage lockout, and internal soft start.