International Rectifier Manuals

The IR2085S is a self oscillating half-bridge driver IC with 50% duty cycle ideally suited for 36V-75V half-bridge DC-bus converters. This product is also suitable for push-pull converters without restriction on input voltage. Each channel frequency is equal to fosc, where fosc can be set by selecting RT & CT, where fosc ≈ 1/(2*RT.CT). Dead-time can be controlled through proper selection of CT and can range from 50 to 200nsec. Internal soft-start increases the pulse width during power up and maintains pulse width matching for the high and low outputs throughout the start up cycle. The IR2

The IR20153S is a high voltage, high speed power MOSFET driver. It features a floating channel, tolerance to negative transient voltage, dV/dt immunity, gate drive supply range of 5V to 20V, undervoltage lockout, internal recharge FET for bootstrap refresh, internal deadtime of 11µs and 0.8µs, CMOS Schmitt-triggered input logic, output out of phase with input, reset input, split pull-up and pull-down gate drive pins.

IR2011 is a high power, high speed power MOSFET driver with independent high and low side referenced output channels, ideal for Audio Class D and DC-DC converter applications.

The IR2010 is a high power, high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels, ideal for Audio Class D and DC-DC converter applications.

The IR2010 is a high power, high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels, ideal for Audio Class D and DC-DC converter applications. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.0V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation de- lays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configura- tion which operates up to 200 volts. Proprietary HVIC and latch immune CMOS tech- nologies enable ruggedized monolithic construction.

Specifications for the SC105.5. series Schottky diodes, including dimensions, thickness, current, and voltage.

This document is about the specification of SC105, including package type, size, heat resistance, current, etc.

IRF2805PbF HEXFET® Power MOSFET is a automotive grade power MOSFET from International Rectifier. It features advanced process technology, ultra low on-resistance, 175℃ operating temperature, fast switching, repetitive avalanche allowed, etc. It is suitable for applications such as climate control, ABS, electronic braking, windshield wipers.

This document is the absolute maximum ratings of a automotive power MOSFET device produced by a company. The device uses the latest process technology from International Rectifier and has extremely low on-resistance and 175℃ maximum operating temperature.

The IRF2807 HEXFET® Power MOSFET is an efficient and reliable device with extremely low on-resistance and fast switching speed. It utilizes advanced processing techniques and is suitable for a wide range of applications.

IRF2807S IRF2807L HEXFET® Power MOSFET is a high-performance power device with extremely low on-resistance, high switching speed and ruggedized design. It is suitable for a wide range of applications, including automotive, industrial and consumer electronics applications.

This document introduces the features and characteristics of IRF2903Z IRF2903ZS IRF2903ZL, including advanced process technology, ultra-low on-resistance, 175°C maximum operating temperature, fast switching speed and improved repetitive avalanche rating.

ST330C is a 650A phase control thyristor with a metal case and ceramic insulator. It is suitable for applications such as DC motor controls, controlled DC power supplies, and AC controllers.