International Rectifier Manuals

IR2130/IR2132(J)(S) is a high voltage, high speed power MOSFET and IGBT driver with three independent high and low side referenced output channels. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are compatible with CMOS or LSTTL outputs, down to 2.5V logic. A ground-referenced operational amplifier provides analog feedback of bridge current via an external cur- rent sense resistor. A current trip function which termi- nates all six outputs is also derived from this resistor. An open drain FAULT signal indicates if an over-cur- rent or undervoltage shutdown has occurred. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use at high frequencies. The floating channel is designed for bootstrap operation, fully operational to +600V, tolerant to negative transient voltage, dv/dt immune. Gate drive supply range from 10 to 20V. All channels have undervoltage lockout. Over-current shutdown turns off all six drivers. Independent half-bridge drivers. All channels have matched propagation delay. 2.5V logic compatible. Outputs out of phase with inputs. Cross-conduction prevention logic. Also available LEAD-FREE.

The IR2128 is a high voltage, high speed power MOSFET and IGBT driver. It features a floating channel, tolerance to negative transient voltage, gate drive supply range of 10 to 20V, undervoltage lockout, and 5V Schmitt-triggered input logic. The IR2128 can be used to drive an N-channel power MOSFET or IGBT in the high side or low side configuration, operating up to 600V.

The document describes the features and characteristics of the IR2127/IR2128/IR21271(S) high voltage, high speed power MOSFET and IGBT driver. The driver has a floating channel designed for bootstrap operation, fully operational to +600V, and tolerant to negative transient voltage. It has an application-specific gate drive range for motor drive and automotive applications. It supports undervoltage lockout and is compatible with 3.3V, 5V, and 15V input logic. The FAULT lead indicates shutdown has occurred. The output is in phase with the input for IR2127/IR21271 and out of phase for IR2128. It is a current sensing single channel driver.

The IR2125Z is a high voltage, high speed power MOSFET and IGBT driver with over-current limiting protection circuitry. The product has the following features: floating channel design, which enables bootstrap operation; fully operational to +400V; tolerance to negative transient voltage; dV/dt immunity; gate drive supply range from 12 to 18V; undervoltage lockout; current detection and limiting loop to limit driven power transistor current; fault lead indicates fault conditions and programmes shutdown time; output in phase with input.

The IR2125 is a high voltage, high speed power MOSFET and IGBT driver with over-current limiting protection circuitry. It features a floating channel designed for bootstrap operation and is fully operational up to +500V. It is also tolerant to negative transient voltage and dV/dt immune. The driver has a gate drive supply range from 12 to 18V, undervoltage lockout, and a current detection and limiting loop to limit the driven power transistor current. An error lead indicates fault conditions and programs shutdown time. The output is in phase with the input.

The IR2121 is a high speed power MOSFET and IGBT driver with over-current limiting protection cir- cuitry.

IR2117/IR2118(S) is a high voltage, high speed power MOSFET and IGBT driver. It features a floating channel designed for bootstrap operation, fully operational to +600V, tolerant to negative transient voltage, and immune to dV/dt. It has a gate drive supply range from 10 to 20V, undervoltage lockout, CMOS Schmitt-triggered inputs with pull-down, and output in phase with input (IR2117) or out of phase with input (IR2118).

The IR2118 is a high voltage, high speed power MOSFET and IGBT driver. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS outputs. The output driver features a high pulse current buffer stage designed for minimum cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high or low side configuration which operates up to 600 volts.

The IR2112 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Its features include a floating channel design, fully operational up to +600V, tolerance to negative transient voltage, gate drive supply range from 10 to 20V, undervoltage lockout, and matched propagation delay.

The IR2112(S) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable rugge- dized monolithic construction. Logic inputs are com- patible with standard CMOS or LSTTL outputs, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to sim- plify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.

IR2112(S) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable rugge- dized monolithic construction. Logic inputs are com- patible with standard CMOS or LSTTL outputs, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction.

The IR2112 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels.