Infineon manuals, page 12
INFINEON IPA50R350CP Manual
The IPA50R350CP CoolMOSTM power transistor features the lowest figure of merit RON x Qg, ultra low gate charge, extreme dv/dt rating, high peak current capability, Pb-free lead plating, RoHS compliance. It is qualified according to JEDEC standards. It is designed for hard and soft switching SMPS topologies, CCM PFC for notebook adapters, PDP and LCD TVs, and PWM for notebook adapters, PDP and LCD TVs.
INFINEON SMBT2907A/MMBT2907A Manual
This document describes the features and characteristics of SMBT2907A/MMBT2907A PNP silicon switching transistors, released on March 20, 2006. These features include high DC current gain, low collector-emitter saturation voltage, etc. The document also provides detailed information on maximum ratings, thermal resistance, and electrical characteristics.
INFINEON SPW20N60CFD Manual
SPW20N60CFD is a new type of high voltage power transistor with ultra-low gate charge, periodic avalanche rated, extreme dv/dt rated, high peak current capability, intrinsic fast-recovery body diode and extreme low reverse recovery charge.
INFINEON SPP80N06S2L-07 SPB80N06S2L-07 Manual
This document is the characteristic parameter table of SPP80N06S2L-07 and SPB80N06S2L-07, including voltage, current, power, temperature, packaging and other information.
INFINEON IPD90R1K2C3 Manual
IPD90R1K2C3 CoolMOS™ Power Transistor features the lowest RON x Qg figure-of-merit, extreme dv/dt rating, high peak current capability and is qualified according to JEDEC1) for target applications. It is Pb-free, lead plated, and RoHS compliant.
INFINEON BUZ 31 Manual
This document describes the features and characteristics of SIPMOS® power transistors, including N-channel, enhancement mode, and avalanche-rated.
INFINEON IPA60R199CP Manual
ipa60r199cp is a power transistor with ultra-low gate charge, extreme dv/dt rating and high peak current capability.
INFINEON SPP04N80C3 SPA04N80C3 Manual
SPP04N80C3 is a high voltage power transistor with ultra low gate charge, periodic avalanche rated, extreme dv/dt rated, ultra low effective capacitances and improved transconductance. It is available in PG-TO220 package.
INFINEON IPI60R385CP Manual
IPI60R385CP CoolMOSTM Power Transistor Features
INFINEON - BAV99... Manual
BAV99 is a silicon switching diode produced by Texas Instruments. It has high switching speed, high reverse voltage, low power consumption and other characteristics, and can be applied to high-frequency switching circuits.
INFINEON BC846...-BC850... Manual
This document describes the features and characteristics of the BC846.-BC850. series NPN silicon AF transistors, released in 2006. They are suitable for AF input stages and driver applications, with high current gain, low collector-emitter saturation voltage, low noise between 30 Hz and 15 kHz, and complementary types available (BC856.-BC860. PNP).
INFINEON SPP16N50C3 SPI16N50C3 SPA16N50C3 Manual
This datasheet mainly introduces the features and characteristics of the SPP16N50C3, SPI16N50C3 and SPA16N50C3 products, including rated current, continuous current, pulsed current, avalanche energy, avalanche current, gate source voltage, power dissipation, operating temperature, reverse diode dv/dt and drain source voltage slope.
INFINEON BUZ 73 Manual
BUZ 73 is an N-channel enhancement mode avalanche-rated power transistor. It has a maximum rating of 200V, 7A and 0.4 Ohms of on-resistance.
INFINEON C164CI/SI C164CL Manual
16-Bit Single-Chip Microcontroller
INFINEON IPA90R1K2C3 Manual
IPA90R1K2C3 CoolMOS™ Power Transistor Features, the lowest figure-of-merit RON x Qg, extreme dv/dt rated, high peak current capability, qualified according to JEDEC1) for target applications, Pb-free lead plating; RoHS compliant, Ultra low gate charge. CoolMOS™ 900V is designed for: Quasi Resonant Flyback / Forward topologies, PC Silverbox and consumer applications, Industrial SMPS.