The AO4411 is a P-Channel enhancement mode field-effect transistor that uses advanced trench technology to provide excellent RDS(ON) and ultra-low gate charge. It is suitable for use as a load switch or in PWM applications.
The AO4408 is a N-channel enhancement mode field effect transistor with a maximum drain-source voltage of 30V and a maximum drain current of 12A. Typical on-resistance is 13mΩ (VGS = 10V) and typical on-resistance is 16mΩ (VGS = 4.5V). The AO4408 uses advanced trench technology to provide excellent RDS(ON), low gate charge and fast switching. This device makes an excellent high side switch for notebook CPU core DC-DC conversion. AO4408L(Green Product) is offered in a lead-free package.
AO4409 is a P-Channel Enhancement Mode Field Effect Transistor produced by Alpha & Omega Semiconductor, Ltd. It has a maximum power dissipation of 3W, a maximum working temperature of 150℃, a maximum working voltage of -30V, and a maximum working current of -15A. AO4409 uses advanced trench technology to provide excellent RDS(ON) and ultra-low low gate charge, making it suitable for use as a load switch or in PWM applications.
The AO4415 is a P-channel enhancement mode field effect transistor from Alpha & Omega Semiconductor, Ltd. Its features are RDS(ON) < 26mΩ (VGS = -20V), RDS(ON) < 35mΩ (VGS = -10V), and it is suitable for use as a load switch or in PWM applications.
The AO4419 is a P-channel enhancement mode field effect transistor with low on-resistance and low gate charge, suitable for load switch or PWM applications.
The AO4420 is a N-channel enhancement mode field effect transistor produced by Alpha & Omega Semiconductor, Ltd., which has good RDS(ON), short circuit immunity and body diode characteristics, and is suitable for use as a synchronous switch in PWM applications.
The AO4422 is a N-channel enhancement mode field effect transistor from Alpha & Omega Semiconductor, Ltd. Its maximum drain-source voltage is 30V, and its maximum drain-source current is 11A. Its on-resistance is less than 15mΩ (VGS = 10V) and less than 24mΩ (VGS = 4.5V).
The AO4423 is a P-Channel Enhancement Mode Field Effect Transistor manufactured by Alpha&Omega Semiconductor, Ltd. It has excellent RDS(ON) and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications and it is ESD protected.
AO4430, AO4430L are N-channel enhancement mode field effect transistors from Alpha & Omega Semiconductor, Ltd. Their maximum voltage is 30V, maximum current is 18A, and ON-resistance is less than 5.5mΩ (VGS = 10V), less than 7.5mΩ (VGS = 4.5V). AO4430L is offered in a lead free package.
AO4433 is a P-channel enhancement mode field effect transistor from Alpha & Omega Semiconductor, Ltd., with excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating.
AO4704 is an N-Channel enhancement mode field effect transistor with Schottky diode characteristics. It uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity, and body diode characteristics. This device is suitable for use as a synchronous switch in PWM applications. The co-packaged Schottky diode boosts efficiency further.
The document describes the features and characteristics of the AO4604 model, including the use of advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The product can be used in power inverters and other applications.
The AO4606 is a complementary enhancement mode field effect transistor produced by Alpha&Omega Semiconductor,Ltd. It has excellent RDS(ON) and low gate charge, and can be used for a variety of applications, such as high side switches.
