The AO4609 is a complementary enhancement mode field effect transistor that uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. It can be used to form a level shifted high side switch and for a host of other applications.
The document describes the features and characteristics of the AO4614 model p-channel and n-channel enhancement mode field effect transistors. It uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The product can be used in H-bridge, inverters, and other applications.
AO4615 is a N-channel MOSFET and P-channel MOSFET produced by ON Semiconductor. It has good RDS(ON) and low gate charge characteristics and can be used as a high side switch, as well as other applications.
AO4610 is a N-channel and P-channel complementary enhancement mode field effect transistor produced by Alpha & Omega Semiconductor, Ltd. Its maximum reverse voltage is 30 V, maximum continuous forward current is 3 A, and maximum continuous drain current is 8.5 A.
AO4805 is a dual P-channel enhancement mode field effect transistor produced by Alpha & Omega Semiconductor, Ltd. It has excellent RDS(ON), ultra-low low gate charge and a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.
AO4806 is a dual N-channel enhancement mode field effect transistor produced by Alpha & Omega Semiconductor, Ltd. It features excellent RDS(ON) and low gate charge. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. The maximum VDS of AO4806 is 20V and the maximum VGS is 12V.
AO4824 is a N-channel field effect transistor with a maximum channel voltage of 30V and a maximum continuous current of 8.5A. It has a low RDS(ON) and low gate charge, making it ideal for use in DC-DC converters.
AO4918 is a dual N-channel enhancement mode field effect transistor from AOS. It features a low RDS(ON) and a low gate charge. The transistor can be used in DC-DC converters with a Schottky diode packaged in parallel with the synchronous MOSFET to further increase efficiency.
The AO4916 is a dual N-channel enhancement mode MOSFET from ON Semiconductor with a maximum channel voltage of 30V and a maximum drain current of 8.5A. The device uses advanced trench technology to provide excellent R DS(ON) and low gate charge, and is suitable for use in DC-DC converters.
