ST Manuals

This is a 2 A / 3.3 V high-efficiency synchronous buck converter evaluation board based on the ST1S09 with inhibit function

The document describes the features and characteristics of the MDmesh™ MOSFET family, including low on-resistance, high dv/dt, and excellent avalanche capabilities.

This document is a data brief for an evaluation board of a single-phase 5A step-down PWM controller by STMicroelectronics. The evaluation board is based on the L6728, a controller with integrated high-current drivers that provides complete control logic and protection for general DC-DC converters. The board demonstrates the operation of the device in a general-purpose low-current application. The input voltage range is 5V to 12V, the output voltage is fixed at 1.25V, and the output current can exceed 5A. The switching frequency is 300kHz.

This is an evaluation board based on the STLED316S LED driver/controller and microcontroller ST7LITE39F2 as SPI master. The capabilities of ST's LED controller/driver STLED316S fit the market segment of front panel for HTiB (home theater in a box), Set top boxes, DVD readers and other similar applications that require a compact and integrated solution, keeping the total system cost as low as possible.

This document describes the STP20NM50FD and STB20NM50FD-1 N-channel power MOSFETs, which have low on-resistance, high dv/dt and avalanche capabilities, low input capacitance and gate charge, tight process control, and high manufacturing yields. It is recommended for use in bridge topologies, particularly ZVS phase-shift converters.

STB20NM50-1 is a N-channel MOSFET device produced by ST company. It has a maximum voltage of 550V@Tjmax, a conduction resistance of 0.20Ω, a current of 20A and a TO220/FP-D²PAK-I²PAK package.

STP20NK50Z - STW20NK50Z is a N-channel 500V - 0.23Ω - 20A TO-220/TO-247 Zener-Protected SuperMESH™Power MOSFET from ST company, which features typical RDS(on) = 0.23 Ω, extremely high dv/dt capability, 100% Avalanche tested, minimized gate charge, very low intrinsic capacitances and very good manufacturing repeatability.

STP20NE10 is a N-channel 100V 0.07Ω 20A TO-220 package STripFET MOSFET produced by SGS-THOMSON. The product has typical RDS(on) = 0.07 Ω, exceptional dv/dt capability, 100% avalanche tested, and application-oriented characteristics descriptions.

STP20NE06L is a N-channel MOSFET produced by STMicroelectronics. It has a rated voltage of 60V, a drain current of 20A, and a fast switching time. It is widely used in DC motor control, DC-DC/DC-AC converters, and synchronous rectification.

STP20NE06 is the latest development of STMicroelectronics' unique “Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

STP20N10L STP20N10LFI is a low threshold power MOS transistor, which has a typical RDS(on) of 0.09 ohms and has the characteristics of high switching speed, strong current capability, high operating temperature, etc. It can be widely used in solenoid and relay drivers, regulators, DC-DC and DC-AC converters, motor control, audio amplifiers, automotive environments (injection, ABS, air bag, lamp drivers, etc.).

STP20N06 is a 60V low-resistance power MOSFET produced by STP. Its typical RDS(on) is 0.06 ohms and it supports repetitive avalanche testing. The maximum junction temperature is 175℃. This MOSFET is mainly used in high current, high frequency switching, relay driver, power regulator, DC-DC and DC-AC converter, motor control, audio amplifier and other applications.

This document describes the features and characteristics of STP200NF04 and STB200NF04 MOSFETs, including low on-resistance, high packing density, and reliable avalanche characteristics.

STMicroelectronis unique StripFET power MOSFET, has extremely high packing density, low resistance, rugged avalanche characteristics, and good manufacturing reproducibility.

This document describes a high-performance power MOSFET product designed by STMicroelectronics, which features low RDS(on), high voltage avalanche and dv/dt capability, as well as low gate charge and switching characteristics. It is suitable for high-current, high-speed switching and switch mode power supply applications.