ST Manuals

STP19N06L and STP19N06LFI are N-channel enhancement mode low threshold power MOS transistors with a typical RDS(on) of 0.085 ohms. They are 100% avalanche tested and suitable for high current, high-speed switching, motor control, audio amplifiers, etc.

STP19N06 and STP19N06FI are N-channel enhancement mode power MOS transistors with features such as low on-resistance, high current capability, and 175°C operating temperature. They are suitable for applications such as high current, high speed switching, solenoid and relay drivers, regulators, DC-DC and DC-AC converters, motor control, audio amplifiers, and automotive environment (injection, ABS, air-bag, lamp drivers, etc.).

The STP190NF04 is a N-channel power MOSFET from STMicroelectronis with a typical RDS(on) of 3.9 mΩ and a maximum current of 120A. It supports TO-220, D2PAK and I2PAK packages and is used in high current, high switching speed and automotive applications.

STP17NK40Z/STP17NK40ZFP is a 400V, 0.23Ω, 15A N-channel MOSFET. It has extremely low RDS(on), extremely high dv/dt capability, 100% avalanche tested, minimized gate charge, very low intrinsic capacitances and very good manufacturing repeatability. This series of products meets the needs of various demanding applications. It is ideal for high current, high speed switching, off-line power supplies, adaptors and PFC, lighting, etc.

This document describes the STP16NS25 and STP16NS25FP N-channel MOSFETs, which have a voltage rating of 250V and an RDS (on) of 0.23Ω. They are suitable for high current, high-speed switching applications, as well as switch mode power supplies and DC-DC converters.

This document describes the features and characteristics of STP16NK65Z and STB16NK65Z-S, two N-channel 650V MOSFET products. These include low on-resistance, high dv/dt capability, 100% avalanche tested, minimized gate charge, very low intrinsic capacitances, etc. These products are suitable for high current, high-speed switching, and offline power supply applications.

This document describes the features and characteristics of the STP16NK60Z, STB16NK60Z-S, and STW16NK60Z N-channel 600V SuperMESH MOSFET products, including extremely high dv/dt capability, 100% avalanche tested, minimized gate charge, very low intrinsic capacitances, and very good manufacturing repeatability.

STP16NF06L, STP16NF06LFP is N-CHANNEL 60V - 0.07 Ω - 16A TO-220/TO-220FP STripFET™ II POWER MOSFET produced by STMicroelectronics, has low RDS(on), exceptional dv/dt capability, low gate charge, and low threshold drive

This document describes the features and characteristics of STMicroelectronics' STP16NF06 STP16NF06FP N-CHANNEL 60V - 0.08 Ω - 16A TO-220/TO-220FP STripFET™ II POWER MOSFET, including low on-resistance, rugged avalanche characteristics, and low gate charge.

STP16NE06L is a STMicroelectronics N-channel enhancement mode Single Feature Size power MOSFET. It has typical RDS(on) = 0.09 ohm, 100% avalanche tested, highest operating temperature of 175oC and high dV/dt capability.

STP16NE06 STP16NE06FP N-channel 60V-0.08Ω-16A-TO-220/TO-220FP STripFET power MOSFET with low on-resistance, rugged avalanche characteristics, and high dV/dt capability. Suitable for DC motor control, DC-DC and DC-AC converters, synchronous rectification, etc.

STP16N10L is an N-channel power MOS transistor with a drain-source voltage of 100V, a typical on-resistance of 0.14Ω, a drain current of 16A, and is suitable for high current, high-speed switching, power motor control, DC-DC and DC-AC converters, synchronous rectification, etc.

STP16CP596 is a 16-bit low voltage low current power shift register produced by STMicroelectronics, which is mainly used for driving LED displays.

STP16CL596 is a low voltage, low current power 16-bit shift register designed for LED panel displays. It provides 15-90mA constant current and a 16V output driving capability. It also supports a 25MHz high clock frequency.

The STP16C596 is a 16-bit shift register that provides 15-120mA constant current to drive LEDs.