ST Manuals

The STP16C596 is a monolithic, medium-voltage, low current power 16-bit shift register designed for LED panel displays. It contains a 16-bit serial-in, parallel-out shift register that feeds a 16-bit D-type storage register. Sixteen regulated current sources are designed to provide 15-120mA constant current to drive the LEDs in the output stage. The serial output changes state on the falling edges of the clock, which improves performance when the clock signal is skewed due to a long daisy chain. The STP16C596's output current can be adjusted by users through an external resistor, allowing control of the LED light intensity. It guarantees a 16V output driving capability, enabling users to connect more LEDs in series. With a clock frequency of 25MHz, it satisfies the system demand for high-volume data transmission. The TSSOP exposed pad package provides 2.5 times higher heat dissipation capability compared to a standard TSSOP package.

STP15N06L STP15N06LFI is a N-channel enhancement mode power MOS transistor manufactured by STMicroelectronics. Its typical RDS(on) is 0.115 ohms. This transistor is suitable for high current, high speed switching, relay drivers, regulators, DC-DC and DC-AC converters, motor control, audio amplifiers, automotive environment (injection, ABS, air bag, lamp drivers, etc.).

STP15N05L is an N-channel enhancement mode power MOS transistor with features such as low on-resistance, low gate charge, logic level compatible input, etc. It can be used in high current, high-speed switching, motor control, audio amplifiers, automotive environments, etc.

This datasheet introduces the STB150NF55 STP150NF55 STW150NF55 N-CHANNEL 55V - 0.005 Ω -120A D²PAK/TO-220/TO-247 STripFET™ II POWER MOSFET's features

The document describes the features and characteristics of a series of SuperMESH™ MOSFET products, including a working voltage of 600V, RDS(on) of 0.45Ω, high dv/dt capability, and 100% avalanche tested. These products are suitable for high current, high-speed switching applications, especially for offline power supplies, adapters, and power factor correction.

This document describes the features and characteristics of the STP14NK50Z, STP14NK50ZFP, STB14NK50Z, STB14NK50Z-1, STW14NK50Z N-channel MOSFET products, including extremely low on-resistance, extremely high dv/dt capability, 100% avalanche tested, minimized gate charge, very low intrinsic capacitances, and very good manufacturing repeatability.

STP14NF12 and STP14NF12FP are N-channel MOSFET power transistors with low gate charge and input capacitance, suitable for high-efficiency isolated DC-DC converters, UPS, and motor control applications.

STMicroelectronics STB14NF10 STP14NF10 STP14NF10FP N-CHANNEL 100V - 0.115 Ω - 15A TO-220/TO-220FP/D2PAK LOW GATE CHARGE STripFET™ II POWER MOSFET is a power MOSFET launched by STMicroelectronics company. Its features are extremely low input capacitance and gate charge. It is suitable for use as the main switch in advanced high-efficiency, high-frequency isolated DC-DC converters for telecom and computer applications, and also for any applications with low gate drive requirements.

STB140NF75 STP140NF75 STB140NF75-1 is a N-CHANNEL 75V - 0.0065Ω -120A D²PAK/I²PAK/TO-220 STripFET™ II POWER MOSFET. It features low on-resistance, rugged avalanche characteristics, and remarkable manufacturing reproducibility. It is suitable for high current, high switching speed, solenoid and relay drivers, as well as automotive 42V battery drivers.

The STB140NF55 STP140NF55 N-CHANNEL 55V - 0.0065 Ω - 80A TO-220/D²PAK STripFET™ II POWER MOSFET from STMicroelectronis features extremely low on-resistance (RDS(on)) and is suitable for a wide range of applications, including motor control, high current, switching applications and automotive environments.

The document describes the features and characteristics of a series of SuperMESH power MOSFET products produced by ST. These products have extremely low on-resistance, extremely high dv/dt capability, 100% avalanche tested, minimized gate charge, and very low intrinsic capacitance. They are suitable for high current, high-speed switching, offline power supplies, adapters and PFC, and lighting applications.

This document provides preliminary information on a new product developed by STMicroelectronics. The product is an N-channel power MOSFET with low on-resistance, gate charge, and reverse recovery charge. It is suitable for switch applications in a wide range of fields such as automotive, consumer, telecom, and industrial.

STP130NS04ZB is a N-channel MOSFET produced by ST company. Its features are RDS(on) typical value is 7mΩ, 100% Avalanche tested, low capacitance and gate charge, maximum junction temperature is 175°C.

STP12PF06 is a P-channel power MOSFET produced by STMicroelectronics. Its main feature is RDS(on) as low as 0.18 ohm, with excellent dv/dt capability, 100% avalanche tested, low gate charge, and can be used in motor control, DC-DC and DC-AC converters.