ST Manuals

74V1T66 is a single bilateral switch fabricated in silicon gate C2MOS technology, which features high speed and low power consumption, and can convert signals within the power supply range.

74V1T70 is an advanced high-speed CMOS SINGLE BUFFER fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. The internal circuit is composed of 2 stages including buffer output, which provide high noise immunity and stable output. Power down protection is provided on input and 0 to 7V can be accepted on input with no regard to the supply voltage. This device can be used to interface 5V to 3V.

The document describes the features and characteristics of a high-speed CMOS single D-type latch, including high-speed transmission rate, low power dissipation, compatibility with TTL outputs, etc. The product is designed to operate from 4.5V to 5.5V, making it ideal for portable applications.

The document describes a high-speed CMOS single positive edge triggered D-type flip-flop. The flip-flop is fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology and is designed to operate from 4.5V to 5.5V. It features high speed, low power dissipation, compatibility with TTL outputs, and can be used to interface 5V to 3V systems.

This document describes the 74V1T80 high-speed CMOS positive edge triggered D-type flip-flop with inverted output. The product features high speed, low power dissipation, compatibility with TTL outputs, etc., making it suitable for portable applications.

The 74V1T86 is an advanced high-speed CMOS SINGLE EXCLUSIVE OR GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology, which has low power dissipation, high speed, wide input voltage range, wide output voltage swing, large output current and strong input and output anti-interference ability, and can be used between 5V and 3V interface.

The 74V2G00 is a high-speed CMOS DUAL 2-INPUT NAND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. The internal circuit is composed of 3 stages including buffer output, which provide high noise immunity and stable output. Power down protection is provided on all inputs and outputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This device can be used to interface 5V to 3V.

The 74V2G02 is a dual 2-input NOR gate from the 74 series, which is fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. It features high speed, low power dissipation, high noise immunity and wide input voltage range. It can be used to implement logic operations.

74V2G03 is an advanced high-speed CMOS DUAL 2-INPUT OPEN DRAIN NAND GATE fabricated with sub-micron silicon gate double-layer metal wiring C2MOS technology. The internal circuit is composed of 3 stages including buffer output, which provide high noise immunity and stable output. The device can, with an external pull-up resistor, be used in wired AND configuration. This device can also be used as a led driver in any other application requiring current sink. Power down protection is provided on all inputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This device can be used to interface 5V to 3V.

This document describes the features and characteristics of the 74V2G05 triple inverter (open drain), including high speed, low power dissipation, high noise immunity, and power down protection.

The 74V2G07 is a high performance CMOS triple buffer with low power consumption, high noise immunity and stable output.

The 74V2G08 is an advanced high-speed CMOS DUAL 2-INPUT AND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. The internal circuit is composed of 2 stages including buffer output, which provide high noise immunity and stable output. Power down protection is provided on all inputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This device can be used to interface 5V to 3V.

74V2G126 is a dual bus buffer with high speed, low power consumption, high noise immunity, power down protection and balanced propagation delay