Fairchild Manuals

HUF75939P3, HUF75939S3ST 22A, 200V, 0.125 Ohm, N-Channel, UltraFET® Power MOSFET, features Ultra Low On-Resistance rDS(ON) = 0.125Ω, Temperature Compensated PSPICE® and SABER© Electrical Models, Spice and SABER© Thermal Impedance Models

HUF75945G3, HUF75945P3, HUF75945S3ST 38A, 200V, 0.071 Ohm, N-Channel, UltraFET® Power MOSFETs features include ultra low on-resistance, simulation models and thermal impedance models

HUF76121P3, HUF76121S3S 47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs High performance 47A N-channel ultra low-resistance logic level MOSFETs

20A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs

FDS3601 is a 1.3A, 100V N-Channel MOSFET from Fairchild Semiconductor Corporation. It features fast switching speed, low gate charge and high performance trench technology, making it ideal for use in DC/DC converters.

This document describes the FDS7066N7 model N-Channel MOSFET power device produced by Fairchild Semiconductor Corporation in 2003. The device is designed for low side synchronous rectifier operation, with extremely low RDS(ON) and high performance. It is suitable for applications such as synchronous rectification and DC/DC converters.

This datasheet provides the absolute maximum ratings, electrical characteristics, features and parameters of FEP16AT - FEP16JT 16 Ampere Glass Passivated Super Fast Rectifiers.

FFB3906 / FMB3906 / MMPQ3906 is a PNP Multi-Chip General Purpose Amplifier designed for general purpose amplifier and switching applications at collector currents of 10 µA to 100 mA.

FPF2100-FPF2107 is a family of load switches that provide advanced load management features. They have a 1.8 to 5.5V input voltage range, controlled turn-on, options for 200mA and 400mA current limits, undervoltage lockout, thermal shutdown, and other features. They are suitable for applications such as PDAs, cell phones, GPS devices, MP3 players, digital cameras, peripheral ports, and hot swap supplies.

This document describes the features and characteristics of the FQB3N60 / FQI3N60 600V N-Channel MOSFET products released by Fairchild Semiconductor International in April 2000. The products are produced using advanced DMOS technology and have low on-state resistance, superior switching performance, and high energy pulse tolerance. They are suitable for high-efficiency switch mode power supplies.

The document introduces the Fairchild Power Switch(FPS) product features, including precision fixed operating frequency, pulse-by-pulse overcurrent limiting, overload protection, overvoltage protection (min. 23V), internal thermal shutdown function, undervoltage lockout, internal high voltage sense FET and auto restart.

The KM4212 is an ultra-low power, low cost, voltage feedback amplifier. Its typical operating voltage is +2.7V or +5V, the input voltage range is -0.3V to +3.8V, the output voltage range is 0.04V to 4.96V. The features of this amplifier include: 70µA supply current, 7.3MHz bandwidth, ±4mA linear output current, ±9mA short circuit output current, 29nV/√Hz input voltage noise. This amplifier is suitable for portable/battery-powered applications, A/D buffer, active filters, signal conditioning, portable test instruments, etc.

The document describes a general purpose optocoupler, consisting of a gallium arsenide infrared emitting diode and a silicon phototransistor, in a 6-pin dual in-line package. It can be used in applications such as power supply regulators, digital logic inputs, and microprocessor inputs.

Characteristics parameters of BZX84C 3V3 - BZX84C 33 Zener diodes, including maximum working current, maximum power dissipation, storage temperature range, operating temperature range, etc.