Fairchild Manuals

FFAF10U20DN is an ultra fast recovery power diode produced by Fairchild Semiconductor Corporation. Its features are soft recovery and low forward voltage. The diode is suitable for power switching circuits, output rectifiers, freewheeling diodes and switching mode power supplies.

The FOD2741 Optically Isolated Amplifier consists of the popular KA431 precision programmable shunt reference and an optocoupler. It comes in 3 grades of reference voltage tolerance = 2%, 1%, and 0.5%. The Current Transfer Ratio (CTR) ranges from 100% to 200%. It also has an outstanding temperature coefficient of 50 ppm/°C.

KA5S series KA5S0765C/KA5S09654QT/KA5S0965/KA5S12656/KA5S1265 is Fairchild Power Switch(FPS), which has the characteristics of low power consumption, high reliability and low cost.

ILC6363CIR-50 / ILC6363CIR-ADJ is a DC-DC converter with adjustable output voltage, supporting 500mA output current, input voltage range of 3.6V-12V, output voltage range of 0.8V-6V, and peak efficiency up to 90%.

KSC1845 is a NPN type transistor produced by Fairchild Semiconductor Corporation. Its maximum collector-emitter voltage is 120V, the maximum collector-emitter current is 50mA, the maximum collector-base current is 10mA, the maximum collector power dissipation is 500mW, and the maximum junction temperature is 150 °C. The storage temperature range is -55 °C ~ 150 °C.

This document describes the absolute maximum ratings, electrical characteristics, and applications of the KSR1009 NPN Epitaxial Silicon Transistor.

60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs

This document describes the features and characteristics of the HUF75343G3, HUF75343P3, HUF75343S3, HUF75343S3S N-Channel UltraFET Power MOSFETs produced by Fairchild Semiconductor Corporation. It has advantages such as low on-resistance, high energy withstand capability, low reverse recovery time, and stored charge, making it suitable for applications where power efficiency is important.

This document introduces the HUF75345G3, HUF75345P3, HUF75345S3S N-Channel UltraFET power MOSFETs manufactured by Fairchild Semiconductor Corporation in 2005. These products are produced using the innovative UltraFET process, which achieves the lowest possible on-resistance per silicon area and provides outstanding performance. The MOSFETs can withstand high energy in the avalanche mode and have very low reverse recovery time and stored charge. They are designed for applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.

This document describes the features and characteristics of the HUF75531SK8 product from Fairchild Semiconductor Corporation, including ultra-low on-resistance, temperature-compensated electrical models, pulse width curve, and UIS rating curve.

HUF75545P3, HUF75545S3, HUF75545S3S 75A, 80V, 0.010 Ohm, N-Channel, UltraFET® Power MOSFET Features: Ultra Low On-Resistance - rDS(ON) = 0.010Ω, VGS = 10V

This document describes the features of Fairchild Semiconductor Corporation's HUF75617D3 and HUF75617D3S UltraFET® Power MOSFETs, including ultra-low on-resistance, simulation models, peak current vs pulse width curve, UIS rating curve, etc.