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This document describes the features and characteristics of the BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor produced by Fairchild Semiconductor Corporation. These products are made using Fairchild's proprietary high cell density DMOS technology, which aims to minimize on-state resistance and provide rugged, reliable, and fast switching performance. These products are particularly suitable for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
2N7002W is an N-channel enhancement mode field effect transistor manufactured by Fairchild Semiconductor. The transistor features low on-resistance, low gate threshold voltage, low input capacitance, fast switching speed, low input/output leakage, and ultra-small surface mount package. It is RoHS compliant.
2N7002V/VA is a N-channel enhancement mode field effect transistor. It has low on-resistance, low gate threshold voltage, low input capacitance, fast switching speed, low input/output leakage and other features.
2N7002T is an N-channel enhancement mode field-effect transistor. It features low on-resistance, low gate threshold voltage, low input capacitance, fast switching speed, low input/output leakage and ultra-small surface mount package.
The 2N7002MTF is a N-Channel Small Signal MOSFET with a maximum on-state resistance of 5.0 ohms, a rated voltage of 60V and a rated current of 200mA. It features lower RDS(on), improved inductive ruggedness, fast switching times, lower input capacitance, extended safe operating area and improved high temperature reliability.
2N7002KW is an N-channel enhancement mode field effect transistor with features such as low on-resistance, low gate threshold voltage, low input capacitance, fast switching speed, low input/output leakage, etc. The product is packaged in an ultra-small surface mount package and is Pb free/RoHS compliant.
2N7002K is a N-channel enhancement mode field-effect transistor from Fairchild Semiconductor Corporation, which has low on-resistance, low gate threshold voltage, low input capacitance, fast switching speed, low input/output leakage, and ultra-small surface mount package.
2N7002DW is a dual N-channel enhancement mode field effect transistor, featuring low on-resistance, low gate threshold voltage, low input capacitance, fast switching speed, low input/output leakage, etc. It is packaged in an ultra-small surface mount package and is lead-free/ROHS compliant.
The document describes the features and characteristics of the 2N7000BU/2N7000TA product, including fast switching times, improved inductive ruggedness, lower input capacitance, extended safe operating area, and improved high temperature reliability.
Fairchild Semiconductor offers a wide range of automotive power products including IGBTs, MOSFETs, motor drivers, power converters, etc., which meet the requirements of automotive power systems, motor drives, power distribution, and electronic control systems.
The 2N3416 / 2N3417 NPN General Purpose Amplifier is a bipolar junction transistor (BJT) with a maximum rated voltage of 50 V and a maximum rated current of 500 mA. It is suitable for general purpose amplifiers and switches requiring collector currents up to 300 mA.
FGA25N120ANTD/FGA25N120ANTD_F109 1200V NPT Trench IGBT is a NPT Trench Technology, Positive temperature coefficient power transistor from Fairchild Semiconductor Corporation. The product has low saturation voltage, low switching loss and extremely enhanced avalanche capability, which makes it suitable for applications such as induction heating and microwave oven.
2N3390 / 2N3391 / 2N3391A / 2N3392 / 2N3393 are NPN General Purpose Amplifiers produced by Fairchild Semiconductor Corporation. This device supports a maximum collector current of 500mA, a maximum collector-emitter voltage of 25V and a maximum collector-base voltage of 25V.
