Fairchild Manuals (Industrial)

FQB30N06L / FQI30N06L is a 60V logic N-channel MOSFET produced by Fairchild Semiconductor Corporation. The device has 32A, 60V, RDS(on) = 0.035Ω @VGS = 10 V, low gate charge (typical 15 nC), low Crss (typical 50 pF), fast switching, 100% avalanche tested, improved dv/dt capability and 175°C maximum junction temperature rating.

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This document describes the features and characteristics of the FQB33N10 / FQI33N10, a 100V N-Channel MOSFET. It includes low on-state resistance, superior switching performance, and ability to withstand high energy pulse in avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifiers, high efficiency switching DC/DC converters, and DC motor control.

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This document is a datasheet for N-Channel enhancement mode power field effect transistors

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This document is a product specification for a certain brand of product, which introduces the product's features and usage methods.

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This datasheet provides the features parameters information of FQB34N20L / FQI34N20L N-Channel MOSFET product.

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This document describes the features and characteristics of Fairchild Semiconductor Corporation's FQB34P10 / FQI34P10 100V P-Channel MOSFET products. They are produced using advanced DMOS technology, with low on-state resistance, superior switching performance, and high energy pulse withstand capability. They are suitable for low voltage applications such as audio amplifiers, high efficiency switching DC/DC converters, and DC motor control.

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This document describes the features and characteristics of FQB44N10 / FQI44N10 100V N-Channel MOSFET, including low voltage applications, low on-state resistance, and fast switching.

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This document describes the characteristics of Fairchild 60V P-Channel MOSFET, including low gate charge (typical 84 nC), low Crss (typical 320 pF), fast switching, 100% avalanche tested, improved dv/dt capability and 175°C maximum junction temperature rating.

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FQB4N80 / FQI4N80 800V N-Channel MOSFET is an N-channel enhancement mode power field effect transistor produced by Fairchild Semiconductor International. It features low on-state resistance, superior switching performance and high-energy pulse withstand capability. It is suitable for high efficiency switch mode power supply.

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FQB50N06 / FQI50N06 60V N-Channel MOSFET is a low voltage switch device made by Fairchild. Its features are low on-state resistance, superior switching performance, and ability to withstand high energy pulses in avalanche and commutation mode.

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This document describes the features and characteristics of FQB50N06L / FQI50N06L 60V logic N-channel MOSFETs. These devices are suitable for low voltage applications such as automotive, DC/DC converters, and high-efficiency switching for power management in portable and battery-operated products.

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FQI55N10 is a 100V N-channel MOSFET produced by Fairchild. This device has a continuous current of 55A, 0.026Ω RDS(on) and 100% avalanche testing, suitable for low voltage applications such as audio amplifier, high efficiency switching DC/DC converter and DC motor control.

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This data sheet provides the features and specifications of FQB5N50C/FQI5N50C 500V N-Channel MOSFET.

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This document is the product information of FQB5N90/FQI5N90 900V N-Channel MOSFET produced by Fairchild Semiconductor International

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This is a PDF document that introduces the features and characteristics of FQB6N80 / FQI6N80 800V N-Channel MOSFETs produced by Fairchild Semiconductor International.

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FQB7N60 / FQI7N60 are N-Channel enhancement mode power field effect transistors suitable for high efficiency switch mode power supply. They feature low on-state resistance, fast switching, high energy pulse, and high voltage withstand capability.

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This is an instruction manual for a certain robot product.

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This datasheet provides the characteristics parameters of FQB8N60C/FQI8N60C 600V N-channel MOSFET, including rated voltage, maximum current, switching speed, surge current, gate voltage, etc.

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This product is a P-channel enhancement mode power field effect transistor produced by Fairchild. It has low on-state resistance, excellent switching performance and high-energy pulse withstand capability. It is suitable for applications such as audio amplifier, high efficiency switching DC/DC converters and DC motor control.

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FQB9N50C/FQI9N50C is a 500V N-Channel MOSFET produced by Fairchild Corporation. It has low on-state resistance and high switching speed. It is suitable for high efficiency switched mode power supplies, active power factor correction, and half bridge topology electronic lamp ballasts.

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