Fairchild Manuals (Industrial)

FQP13N06L is a 60V logic N-channel MOSFET manufactured by Fairchild Semiconductor Corporation using Fairchild's proprietary planar stripe DMOS technology. It has low on-state resistance, superior switching performance and high energy pulse resistance, and is well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.

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FQP13N10 is a 100V N-channel MOSFET from Fairchild with low on-state resistance, fast switching, 100% avalanche tested, suitable for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control

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The FQP13N10L 100V LOGIC N-Channel MOSFET is a high performance MOSFET device produced by Fairchild. It features low RDS(on), low gate charge, low Crss, fast switching, etc. It is suitable for applications such as high efficiency switching DC/DC converters and DC motor control.

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This document describes the features and characteristics of the FQP13N50/FQPF13N50 500V N-Channel MOSFET products, which are produced using Fairchild's proprietary DMOS technology. These products have low on-state resistance, superior switching performance, and high energy pulse withstand capability. They are suitable for high efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts based on half bridge.

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This document introduces the features and characteristics of QFET products, including QFET's structure principle, working principle, application scenarios, etc.

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This document is a white paper on QFET technology. It introduces the features and characteristics of QFET.

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QFET QFET QFET QFET is a new generation of high performance, high density and high efficiency silicon carbide power device launched by Intel Corporation. This device uses Intel's unique silicon carbide substrate technology, which has a very high critical breakdown voltage and a very low on-resistance, and also has excellent thermal shock and thermal cycling characteristics, which can meet the harsh requirements of high power and high density applications.

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The FQA9N90C_F109 900V N-Channel MOSFET is a power field effect transistor with low gate charge, low on-state resistance and fast switching characteristics. It is suitable for high-efficiency switched mode power supplies, active power factor correction and electronic lamp ballasts based on half-bridge topology.

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FQA9P25 is a 250V P-Channel MOSFET produced by Fairchild. Its features include low RDS(on), low gate charge, low Crss, fast switching, and 100% avalanche testing.

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FQAF11N90C is a N-Channel MOSFET produced by Fairchild Corporation. Its main features are low resistance, high switching performance and high energy pulse, suitable for high efficiency switch mode power supplies.

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FQAF13N80 is an N-channel enhancement mode power field effect transistor from Fairchild. It uses Fairchild's proprietary planar stripe DMOS technology and has the advantages of low on-state resistance, high switching performance and high energy pulse endurance. It is suitable for high efficiency switch mode power supplies.

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This document is a summary of QFET products, introducing the features and characteristics of QFET products, including product brands, models, names and other information.

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This document provides the characteristics of FQB11P06 / FQI11P06 60V P-Channel MOSFET, including technology principle, application scenarios, performance parameters, etc.

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FQI12P20 is a 200V P-Channel MOSFET with low gate charge, low Crss, fast switching, 100% avalanche tested and improved dv/dt capability

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The document describes the features and characteristics of the products.

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200V N-Channel MOSFET, features low gate charge, low input capacitance, high switching speed, 100% avalanche tested, improved dv/dt capability.

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This product is a high-performance power electronic measurement instrument with multiple input channels, wide measurement range, strong measurement functions, strong data processing capabilities, clear data display, simple operation, strong anti-interference ability and convenient use, which is widely used in the power system, electronic communication system, industrial control system and other industries for power electronic device testing, testing, fault diagnosis, analysis and maintenance.

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This datasheet introduces the features and characteristics of FQB22P10 / FQI22P10 P-channel MOSFET devices.

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The FQB27P06 / FQI27P06 is a 60V P-channel MOSFET produced by Fairchild, which has low gate charge, low Crss, fast switching, etc. It is suitable for low-voltage applications such as automotive, DC/DC converters, and high-efficiency switching for power management in portable and battery-operated products.

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