Fairchild Manuals (Industrial)

This document describes the FQD1N80 / FQU1N80 800V N-Channel MOSFET products, which are produced using Fairchild's proprietary technology. The products feature low on-state resistance, superior switching performance, and high energy pulse withstand capability, making them well suited for high efficiency switch mode power supplies.

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FQD20N06 / FQU20N06 60V N-Channel MOSFET is a high-performance power field effect transistor from Fairchild with low RDS(on), low gate charge, low Crss, fast switching, 100% avalanche tested, and improved dv/dt capability, suitable for low-voltage applications such as automotive, DC/DC converters

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This is a product manual that introduces the features of FQD2N60C/FQU2N60C, including RDS(on) = 4.7Ω @VGS = 10 V, low gate charge (typical 8.5 nC), low Crss (typical 4.3 pF), fast switching, 100% avalanche tested, improved dv/dt capability, etc.

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FQD2N80 / FQU2N80 is an 800V N-channel MOSFET produced by Fairchild. It has low on-state resistance, high frequency switching, 100% avalanche testing and other features.

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The document describes a product with features and characteristics. The product has multiple functions and advantages, suitable for various scenarios and needs.

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FQD2P40 / FQU2P40 is a 400V P-Channel MOSFET, using Fairchild's proprietary planar stripe DMOS technology, with extremely low on-state resistance, fast switching speed and high voltage resistance, suitable for electronic lamp ballasts.

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FQU30N06 N-Channel MOSFET is a power field effect transistor manufactured by Fairchild Corporation. This device uses Fairchild's proprietary planar stripe DMOS technology. This technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation mode. It is well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.

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QD3N60C/FQU3N60C N-Channel enhancement mode power field effect transistor, rated voltage 600V, rated current 2.4A, good switching characteristics, no external resistance, suitable for switch power supplies, electronic lamp ballasts and other occasions.

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This document describes the features and characteristics of FQD3P50 / FQU3P50 500V P-Channel MOSFET, including low on-state resistance, low gate charge, and fast switching speed.

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This document introduces the key technologies, deployment models, and typical applications of Huawei's enterprise network solution. It also elaborates on the advantages of Huawei Cloud Network Convergence Solution, including multi-dimensional programming, multi-cloud convergence, flexible intelligence, security and reliability. Through this document, you can learn about the key technologies and advantages of Huawei's enterprise network solution, and quickly build an enterprise network solution suitable for you on Huawei Cloud.

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QFET QFET QFET QFET is a switching component for fast switching power electronic applications. It is a solid state switch that uses semiconductor technology to control current, allowing it to be switched on and off to control the flow of electricity. QFET QFET QFET QFET is a high-performance switch that has fast switching speeds and low losses. It is widely used in power electronic systems.

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This document describes the features and characteristics of a 250V P-Channel MOSFET product, which is produced using Fairchild's proprietary technology. It has features such as low on-state resistance, fast switching, and high withstand voltage capability, making it suitable for high efficiency switching DC/DC converters.

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FQD5N20L/FQU5N20L is a 200V logic N-channel MOSFET produced by Philips, with RDS(on)=1.2Ω @VGS=10V, low gate charge (typ. 4.8 nC), low Crss (typ. 6.0 pF), fast switching, 100% avalanche tested, improved dv/dt capability and low-level gate drive requirement, suitable for high-efficiency switching DC/DC converters, switch mode power supplies and motor control.

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FQD5N60C / FQU5N60C 600V N-Channel MOSFET is a Fairchild’s proprietary, planar stripe, DMOS technology N-Channel enhancement mode power field effect transistor. It has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

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FQD5P20 / FQU5P20 is a P-channel enhancement mode power field effect transistor. It features low on-state resistance, superior switching performance, and high energy pulse withstand capability. Suitable for high efficiency switching DC/DC converters.

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The document describes the features and characteristics of the products, including certain functions and designs.

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This document describes the features and characteristics of FQD6N40C / FQU6N40C 400V N-Channel MOSFET, including low on-state resistance, fast switching performance, and high energy pulse endurance. It is suitable for high-efficiency switched mode power supplies and electronic lamp ballasts based on half bridge topology.

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FQD6N50C / FQU6N50C is a 500V N-Channel MOSFET from Fairchild Semiconductor Corporation. Its features are: 4.5A, 500V, RDS(on) = 1.2 Ω @VGS = 10 V, low gate charge (typical 19nC), low Crss (typical 15pF), fast switching, 100% avalanche tested, improved dv/dt capability.

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