Fairchild Manuals (Industrial)

This document describes the features and characteristics of the FQA24N60 600V N-Channel MOSFET product produced by Fairchild Semiconductor International, including low on-state resistance, superior switching performance, and high energy pulse withstand capability. These products are well suited for high efficiency switch mode power supplies.

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The FQA19N60 is a N-channel enhancement mode power field effect transistor produced by Fairchild. It uses Fairchild's proprietary planar stripe DMOS technology, which features ultra-low on-state resistance, superior switching performance, and high-energy pulse handling capability. It is well suited for high efficiency switch mode power supplies.

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This file is about FQA170N06's datasheet. This product is a N-Channel enhancement mode power field effect transistors. It has low gate charge, low Crss, fast switching, 100% avalanche tested, improved dv/dt capability, 175°C maximum junction temperature rating.

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The document describes the features and characteristics of the 2N7002MTF product, including lower RDS(on), improved inductive ruggedness, fast switching times, lower input capacitance, extended safe operating area, and improved high temperature reliability.

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FQA160N08 is a 80V N-channel MOSFET produced by Fairchild Semiconductor International. It features low gate charge, low Crss, fast switching, 100% avalanche tested, improved dv/dt capability and 175°C maximum junction temperature rating.

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This document is an introduction to the FQA140N10 QFET QFET QFET QFET TM FQA140N10 100V N-Channel MOSFET produced by Fairchild Semiconductor International. This product is manufactured using Fairchild's proprietary DMOS technology and features low on-state resistance, superior switching performance, and high energy pulse tolerance. It is suitable for low voltage applications such as audio amplifiers, high efficiency switching DC/DC converters, and DC motor control.

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This document describes the features and characteristics of the FQA13N80_F109 800V N-Channel MOSFET product introduced by Fairchild Semiconductor Corporation in 2007, including 12.6A current, 0.75Ω RDS(on), low gate charge, and low Crss.

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The FQA13N50CF is a 500V N-channel MOSFET from Fairchild with a 15A rating, 0.48 ohm RDS(on) and 43nC gate charge. This device is made using Fairchild's proprietary planar stripe DMOS technology and features a low on-resistance, high switching speed and a fast-recovery body diode. It is well-suited for high efficiency switched mode power supplies, active power factor correction and electronic lamp ballast based on half bridge topology.

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The FQA11N90C_F109 is a 900V N-channel MOSFET that features low gate charge (typical 60 nC), low Crss (typical 23pF), fast switching, 100% avalanche tested, improved dv/dt capability, and RoHS compliance.

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FQA11N90 / FQA11N90_F109 is a N-Channel MOSFET with a maximum voltage of 900V and a rated current of 11.4A. It features low gate charge, low gate resistance, low gate reverse capacitance, fast switching, 100% avalanche tested, improved dv/dt capability, etc. It is suitable for high efficiency switched mode power supplies, active power factor correction, and electronic lamp ballast based on half bridge topology.

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This document describes the features and characteristics of the FQA10N80C_F109 800V N-Channel MOSFET, including 10A current, 1.1Ω RDS(on), low gate charge, fast switching, 100% avalanche tested, etc.

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FDZ663P P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET, the maximum resistance of this product is 134 mΩ, it occupies PCB area 0.64 mm2, the package height is less than 0.4 mm, it is a low power, miniaturization, high performance MOSFET.

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The FDZ661PZ is a P-channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET from Fairchild. Its features include a maximum rDS(on) of 140 mΩ, a small PCB area, a low package height, and a high ESD protection level.

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The FDZ391P is a 1.5V P-channel WL-CSP MOSFET from Fairchild Semiconductor. This device features a low RDS(on), low power consumption, and a small package, making it suitable for battery management, load switching, and battery protection applications.

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The FDZ375P P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET is a product from Fairchild Semiconductor Corporation. The product features an extremely low RDS(on) and a very small PCB area, making it ideal for battery management, load switching and battery protection applications.

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FDZ371PZ P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET is a low-power, high-performance P-channel MOSFET specifically designed for battery management systems (BMSs) and other applications such as load switches and battery protection. The device is built on Fairchild's advanced 1.5 V PowerTrench® process with state-of-the-art “fine pitch” Thin WLCSP packaging process, which minimizes both PCB space and rDS(on).

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The FDZ197PZ is a P-channel power MOSFET designed using the 1.5V PowerTrench process and WL-CSP packaging technology. It features low RDS(on), small PCB footprint, ultra-thin packaging, low gate charge, etc. It is suitable for applications such as battery management, load switches, and battery protection.

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The FDZ193P is a Fairchild P-Channel 1.7V PowerTrench® WL-CSP MOSFET with a maximum RDS(on) of 90 mΩ @VGS=-4.5V, ID=-1A. It occupies only 1.5 mm2 of PCB area and is less than 0.65 mm thick when mounted to a PCB. It is RoHS compliant.

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The FDZ192NZ is a N-channel 1.5V PowerTrench® thin WL-CSP MOSFET designed by Fairchild Semiconductor Corporation. The device features an extremely low RDS(on), and can operate in a voltage range of 1.5V to 20V with a maximum current of 5.3A.

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FDZ191P P-Channel 1.5V PowerTrench® WL-CSP MOSFET features a maximum RDS(on) of 85 mΩ, occupies only 1.5 mm2 of PCB area, is less than 0.65 mm in height when mounted to PCB, and is RoHS compliant. It is ideal for battery management, load switch, and battery protection applications.

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