Fairchild Manuals (Industrial)

FQA90N08 is a 80V N-channel MOSFET with low on-state resistance, high switching speed, 100% avalanche tested and improved dv/dt capability.

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This document describes the features of the FQA8N90C_F109 900V N-Channel MOSFET, including 8A current, 1.9Ω RDS(on), low gate charge, fast switching, etc.

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The FQA8N100C 1000V N-Channel MOSFET is a low gate charge, low Crss, fast switching, 100% avalanche tested, improved dv/dt capability MOSFET.

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This document describes the features and characteristics of the FQA7N80C_F109 800V N-Channel MOSFET, including low gate charge, fast switching, and improved dv/dt capability.

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The document introduces QFET, a novel power device for power electronic systems. QFET has the advantages of high switching speed, low on-resistance, high breakdown voltage and wide bandgap, which makes it promising for wide application in power electronic systems.

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This document describes the features and characteristics of the FQA70N10 N-Channel MOSFET product produced by Fairchild Semiconductor International. These products are made using advanced DMOS technology, which offers low on-state resistance, superior switching performance, and the ability to withstand high energy pulses. They are suitable for low voltage applications such as audio amplifiers, high efficiency switching DC/DC converters, and DC motor control.

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This document describes the features and characteristics of the FQA6N90C_F109 900V N-Channel MOSFET produced by Fairchild Semiconductor Corporation, including 6A current, 900V voltage, low gate charge and Crss, fast switching, 100% avalanche tested, and improved dv/dt capability.

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This document describes the features and characteristics of Fairchild's FQA65N20 QFET TM FQA65N20 200V N-Channel MOSFET, including low on-state resistance, superior switching performance, and reliability under high energy pulses. These devices are suitable for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply, and motor control.

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FQA62N25C is a 250V N-channel MOSFET produced by Fairchild. Its features are RDS(on) = 0.035Ω @VGS = 10 V, low gate charge, low Crss, fast switching, 100% avalanche testing and improved dv/dt capability.

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This document mainly introduces the features and advantages of QFET QFET QFET QFET

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FQA46N15 is a 150V N-channel MOSFET from Fairchild. Its features are RDS(on) = 0.042 Ω @VGS = 10 V, low gate charge (typ 85 nC), low Crss (typ 100pF), fast switching, 100% avalanche tested, improved dv/dt capability and 175°C maximum junction temperature rating

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2N7052 / 2N7053 / NZT7053 is an NPN Darlington transistor designed for applications requiring extremely high gain and high breakdown voltage. It can handle collector currents up to 1.0A.

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The document describes the features of QFET QFET QFET QFET, including brand, model, power, voltage and frequency

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This document provides the absolute maximum ratings and electrical characteristics of the 2N7051 NPN epitaxial silicon transistor. It includes parameters such as collector-emitter voltage, collector-base voltage, emitter-base voltage, collector current, and storage temperature.

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This document introduces the overview, main features and advantages of QFET, and provides application cases of QFET in communication networks and computer storage.

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The FQA36P15 / FQA36P15_F109 150V P-Channel MOSFET is a high-efficiency, fast switching P-channel enhancement mode power field effect transistor produced by Fairchild Semiconductor Corporation. This device uses Fairchild's proprietary planar stripe DMOS technology to improve switching speed, reduce on-state resistance and withstand high energy pulses in the avalanche and commutation mode, while also improving dv/dt capability.

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The FQA32N20C 200V N-Channel MOSFET is a Fairchild-produced enhancement mode N-channel power field-effect transistor that uses Fairchild's proprietary planar DMOS technology. It has a low on-state resistance, excellent switching performance, and a high energy pulse withstand capability. It is suitable for high-efficiency switching DC/DC converters and switch-mode power supplies.

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This document describes the features and characteristics of the FQA28N15 N-Channel MOSFET product. The product is produced using Fairchild's proprietary DMOS technology, which minimizes on-state resistance, provides superior switching performance, and withstands high energy pulses. It is suitable for low voltage applications such as audio amplifiers, high efficiency switching for DC/DC converters, DC motor control, and uninterrupted power supply.

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The document describes the features and characteristics of QFET products.

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