IXYS Manuals (Industrial)

IXYS SEMICONDUCTOR - 2006 IXYS All rights reserved G D S G = Gate D = Drain S = Source TAB = Drain DS99599E(07/06) Manual

This product is a N-channel enhancement mode fast recovery diode, which has the characteristics of fast recovery diode, Unclamped Inductive Switching (UIS) rated, international standard.

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IXYS IXFN170N10 handbook

This document is about the characteristics of IXFN 170N10, including package, function, application scenarios, advantages, etc.

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IXYS IXFX 21N100F/IXFK 21N100F

PLUS 247TM is a high-frequency switching power MOSFET produced by IXYS company. It has the characteristics of low Qg, low Rg, high dV/dt, low trr and is suitable for DC-DC converters, switch-mode power supplies, choppers and other applications.

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IXYS DSA 20 C 100 PN handbook

DSA 20 C 100 PN is a high performance Schottky Diode with very low Vf, extremely low switching losses, low Irm values, improved thermal behaviour, high reliability circuit operation, low voltage peaks and low noise switching.

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IXYS IXFN 55N50/50N50/55N50/50N50 Single Die MOSFET

The IXFK/IXFN series is a N-channel power MOSFET launched by IXYS in 2002. It adopts miniBLOC package with a dimension of 5.1mm×6.5mm×3.0mm. It features low on-resistance, high switching speed, and excellent EMC performance. It is suitable for DC-DC converters, battery chargers, switching power supplies and other applications.

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IXYS DSA 70 C 100 HB Manual

DSA 70 C 100 HB is a high performance Schottky diode produced by IXYS. It has very low Vf, extremely low switching losses, low Irm values, improved thermal behavior, high reliability circuit operation, low voltage peaks for reduced protection circuits, and low noise switching.

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IXYS DSA 50 C 150 HB Manual

The DSA 50 C 150 HB advanced Schottky diode features very low Vf, extremely low switching losses, low Irm values, improved thermal behavior, high reliability circuit operation, low voltage peaks for reduced protection circuits, and low noise switching.

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IXYS IXFH 21N50F IXFT 21N50F handbook

This datasheet provides information on the maximum ratings, characteristic values, features and applications of HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr.

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IXYS DPG 60 C 300 HB Manual

DPG 60 C 300 HB is a low leakage current, low recovery time, low power Schottky diode, suitable for anti-parallel diodes, anti-saturation diodes, clamp diodes, freewheeling diodes, rectifiers in switch mode power supplies (SMPS) and uninterruptible power supplies (UPS).

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IXYS IXFH 28N50F IXFT 28N50F datasheet

This document provides the characteristics of HiPerRFTM Power MOSFETs F-Class, including maximum voltage, continuous current, transient current, breakdown voltage, breakdown energy, leakage current, switching speed, etc.

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IXYS DPG 30 C 400 HB handbook

DPG 30 C 400 HB is a high performance Schottky diode in the DPG series. It features very low leakage current, very short recovery time, improved thermal behavior, very low Irm values, very soft recovery behavior and avalanche voltage rating for reliable operation. This diode is suitable for antiparallel diodes for high frequency switching devices, antisaturation diodes, snubber diodes, free wheeling diodes, rectifiers in switch mode power supplies (SMPS) and uninterruptible power supplies (UPS).

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IXYS IXTH 20N60 datasheet

IXTH 20N60 / IXTM 20N60 is a N-channel enhancement mode power MOSFET from IXYS. It features international standard packages, low RDS(on), HDMOSTM process, rugged polysilicon gate cell structure, low package inductance (<5nH), easy to drive and to protect, fast switching times. Applications include switch-mode and resonant-mode power supplies, motor control, Uninterruptible Power Supplies (UPS) and DC choppers.

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IXYS DHG 60 C 600 HB Manual

The DHG 60 C 600 HB is a high performance fast recovery diode with the following features: very low leakage current, very short recovery time, improved thermal behavior, very low Irm values, very soft recovery behavior, avalanche voltage rated for reliable operation, soft reverse recovery for low EMI/RFI, low Irm reduces power dissipation within the diode and turn-on loss in the commutating switch.

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IXYS 40N60C Manual

IXKR 40N60C is a N-channel enhancement mode low RDSon, high VDSS MOSFET in ISOPLUS247TM package with electrically isolated base.

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IXYS CoolMOS Power MOSFET ISOPLUS220 handbook

The document describes the features and characteristics of IXYS products, including high power dissipation, isolated mounting surface, high blocking capability, and low on resistance. The product is suitable for applications such as switched mode power supplies and uninterruptible power supplies.

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