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Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment
Logic level enhancement mode N-channel MOSFET in LFPAK package. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power
DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23
(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
New standards and proprietary approaches are enabling the next generation of Powerover-
Ethernet (PoE) systems capable of delivering up to 100W to each powered
device (PD). Large screen LCD displays, 3G / 4G / Wi-Fi hot-spots and pan-tilt-zoom
CCTV cameras, for example, are placing increased demands on the power sourcing
equipment (PSE) in terms of
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.