Technical data sheet for the Texas Instruments CSD25481F4 20 V P‑channel FemtoFET MOSFET.
The CSD25481F4 is a 20 V P‑channel FemtoFET MOSFET offered in a ultra‑small 0402‑style package (0.6 mm × 0.35 mm). It features ultra‑low on‑resistance, low gate charge, and built‑in ESD protection suitable for handheld and mobile applications.
The datasheet provides detailed electrical characteristics, dynamic parameters, thermal metrics, mechanical dimensions, and recommended PCB layout guidelines, along with package and tape‑and‑reel information for designers.
| Drain‑to‑Source Voltage (VDS) | -20 V |
|---|---|
| On‑Resistance (RDS(on)) at VGS = -4.5 V | 90 mΩ (typical) |
| Continuous Drain Current (ID) | -2.5 A |
| Pulse Drain Current (IDM) | -10 A |
| Gate Charge (Qg) at VGS = -4.5 V | 913 pC |
| Gate‑to‑Drain Charge (Qgd) | 153 pC |
| Junction‑to‑Ambient Thermal Resistance (RθJA) typical | 85 °C/W |
The maximum drain‑to‑source voltage is -20 V.
The typical on‑resistance at VGS = -4.5 V is 90 mΩ.
The gate charge at VGS = -4.5 V is 913 pC.
The recommended pulse drain current (IDM) is -10 A.