Technical datasheet for the Jilin Sino-Microelectronics MC08N005 N-channel MOSFET, detailing electrical characteristics, thermal properties, and mechanical…
This document is a technical datasheet for the MC08N005 N-Channel Enhancement Mode MOSFET manufactured by Jilin Sino-Microelectronics. The device features low gate charge and low on-resistance (Rdson), making it suitable for high-efficiency applications such as isolated DC/DC converters in telecom and industrial sectors, as well as synchronous rectification in AC/DC converters.
The datasheet provides comprehensive specifications including absolute maximum ratings, electrical characteristics (off-state, on-state, dynamic, and switching parameters), thermal characteristics, and mechanical package dimensions for TO-220C and TO-263 packages. It also includes application notes regarding ordering codes and usage precautions.
| Continuous Drain Current (ID) | 120 A @ Tc=25℃ |
|---|---|
| Maximum Drain-Source Voltage (VDSS) | 80 V |
| Thermal Resistance Junction-to-Case (Rth(j-c)) | 0.66 ℃/W |
| Operating Temperature Range (TJ) | -55～+150 ℃ |
The device is designed for isolated DC/DC converters in telecom and industrial fields, as well as synchronous rectification in DC/DC and AC/DC converters.
The maximum pulsed drain current (IDM) is 480 A.